INT200
ABSOLUTE MAXIMUM RATINGS1
HSD1/HSD2 Voltage (1 Suffix) ................................. 600 V
Power Dissipation
(2 Suffix) ................................. 800 V
HSD1/HSD2 Slew Rate ........................................... 10 V/ns
VDD Voltage ................................................................ 16.5 V
Logic Input Voltage ...................................... -0.3V to 5.5 V
LS OUT Voltage ................................ -0.3 V to VDD + 0.3 V
Storage Temperature ....................................... –65 to 125°C
Ambient Temperature ........................................ -40 to 85°C
Junction Temperature ................................................. 150°C
Lead Temperature(2).................................................... 260°C
PF Suffix (TA = 25°C) ......................................... 1.25 W
(TA = 70°C) ....................................... 800 mW
TF Suffix (TA = 25°C) ......................................... 1.04 W
(TA = 70°C) ....................................... 667 mW
Thermal Impedance (θJA)
PF Suffix ........................................................... 100°C/W
TF Suffix........................................................... 120°C/W
1. Unless noted, all voltages referenced to COM, TA = 25°C
2. 1/16" from case for 5 seconds.
Conditions
Parameter
Symbol
(Unless Otherwise Specified)
VDD = 15 V, COM = 0V
TA = -40 to 85°C
Min
Typ
Max
Units
LOGIC
VIH = 4.0 V
VIL = 1.0 V
0
10
0
150
20
Input Current,
High or Low
IIH, IIL
µA
V
-20
Input Voltage
High
4.0
VIH
Input Voltage
Low
1.0
VIL
V
Input Voltage
Hysteresis
0.3
0.7
VHY
V
HSD OUTPUTS
1 Suffix
2 Suffix
600
800
700
900
Breakdown
Voltage
BVDSS
IHSD(OFF)
IHSD(ON)
tHSD(ON)
COSS
V
Off-State
Output Current
VHSD1, VHSD2 = 500 V
VHSD1, VHSD2 = 10 V
0.1
25
15
µA
mA
ns
On-State
Output Current
5
On-State
Pulse Width
156
Output
Capacitance
VHSD1, VHSD2 = 25 V
10
pF
F
1/96
5