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INT200TFI1 参数 Datasheet PDF下载

INT200TFI1图片预览
型号: INT200TFI1
PDF下载: 下载PDF文件 查看货源
内容描述: 低侧驱动器和高侧控制与同步传导锁定 [Low-side Drive and High-side Control with Simultaneous Conduction Lockout]
分类和应用: 驱动器接口集成电路光电二极管
文件页数/大小: 12 页 / 99 K
品牌: POWERINT [ Power Integrations ]
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INT200  
INT200 Functional Description  
5 V Regulator  
HSD1/HSD2  
Conduction Latch  
The 5 V linear regulator circuit provides  
the supply voltage for the control logic  
andhigh-voltagelevelshiftcircuit. This  
allows the logic section to be directly  
compatible with 5 V CMOS logic  
without the need of an external 5 V  
supply.  
The HSD1 and HSD2 outputs are  
connected to integrated high-voltage N-  
channel MOSFET transistors which  
perform the level-shifting function for  
communication to the high-side driver.  
Controlled current capability allows the  
drain voltage to float with the high-side  
driver. Twoindividualchannelsproduce  
a true differential communication  
channel for accurately controlling the  
high-side driver in the presence of fast  
moving high-voltage waveforms.  
AnRSlatchpreventsthelow-sidedriver  
andhigh-sidedriverfrombeingonatthe  
sametime,regardlessoftheinputsignals.  
.
Delay Circuit  
The delay circuit matches the low-side  
propagation delay with the combination  
of the pulse circuit, high voltage level  
shift, and high-side driver propagation  
delays. This ensures that the low-side  
driver and high-side driver will never be  
on at the same time during switching  
transitions in either direction.  
Undervoltage Lockout  
Theundervoltagelockoutcircuitdisables  
the LS OUT pin and both HSD pins  
whenever the VDD power supply falls  
below typically 9.0 V, and maintains  
thisconditionuntiltheVDD powersupply  
rises above typically 9.35 V. This  
guarantees that both MOSFETs will  
remain off during power-up or fault  
conditions.  
Pulse Circuit  
The pulse circuit provides the two high-  
voltagelevelshifterswithprecisetiming  
signals. Two pulses are sent over HSD1  
to signal the high-side driver to turn on.  
One pulse is sent over HSD2 to signal  
the high-side driver to turn off. The  
Driver  
The CMOS drive circuit provides drive  
power to the gate of the MOSFET used  
onthelow sideofthehalfbridgecircuit.  
The driver consists of a CMOS buffer  
capable of driving an external transistor  
gate at up to 15 V.  
combination  
of  
differential  
communication with the precise timing  
provides maximum immunity to noise.  
HV+  
8
7
6
5
Q2  
R2  
PHASE 2  
C2  
INT201  
D1  
1
8
2
3
4
5
PHASE 1  
V
DD  
7
6
PHASE 3  
C1  
INT200  
Q1  
3-PHASE  
BRUSHLESS  
DC MOTOR  
HS IN  
1
2
3
4
R1  
LS IN  
HV-  
PI-1461-042695  
Figure 4. Using the INT200 and INT201 in a 3-phase Configuration.  
F
1/96  
3