MITSUBISHI SEMICONDUCTOR TRIAC
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
COMMUTATION CHARACTERISTICS
160
140
120
100
80
VOLTAGE WAVEFORM
TYPICAL
EXAMPLE
TYPICAL EXAMPLE
3
2
t
Tj = 125°C
VD
(dv/dt)
C
T
j
= 125°C
102
7
5
3
2
I
T = 4A
CURRENT WAVEFORM
τ = 500µs
= 200V
(di/dt)
C
I
T
# 2
III QUADRANT
VD
τ
t
f = 3Hz
101
7
5
I QUADRANT
60
3
2
MINIMUM
CHARAC-
TERISTICS
VALUE
# 1
40
100
7
III QUADRANT
20
I QUADRANT
5
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
103
TYPICAL EXAMPLE
7
I
FGT I
5
4
3
A
A
I
RGT I
6V
6V
I
RGT III
R
G
RG
V
V
2
102
7
5
4
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
3
2
A
6V
RG
101
V
100
2
3 4 5 7 101
2
3 4 5 7 102
TEST PROCEDURE 3
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
