MITSUBISHI SEMICONDUCTOR TRIAC
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
mA
V
IDRM
Repetitive peak off-state current
On-state voltage
Tj=125°C, VDRM applied
VTM
Tc=25°C, ITM=20A, Instantaneous measurement
—
!
@
#
!
@
#
—
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
V
✽2
—
V
Gate trigger voltage
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
—
V
✽5
—
30
30
30
—
mA
mA
mA
V
✽5
✽5
✽2
—
Gate trigger current
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
—
0.2
—
Gate non-trigger voltage
Thermal resistance
✽4
1.8
°C/W
Rth (j-c)
Junction to case
Critical-rate of rise of off-state
commutating voltage
✽3
—
—
V/µs
(dv/dt)c
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
✽5. High sensitivity (IGT≤20mA) is also available. (IGT item 1)
(dv/dt) c
Voltage
class
VDRM
(V)
Commutating voltage and current waveforms
(inductive load)
Test conditions
Symbol
Min.
—
Unit
R
SUPPLY
1. Junction temperature
VOLTAGE
TIME
8
400
600
Tj=125°C
L
R
L
10
—
10
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–6A/ms
(di/dt)c
MAIN CURRENT
V/µs
TIME
TIME
MAIN
VOLTAGE
3. Peak off-state voltage
VD=400V
12
(dv/dt)c
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
102
200
180
160
140
120
100
80
7
5
3
2
Tj = 125°C
101
7
5
3
2
Tj = 25°C
100
7
5
3
2
60
40
20
10–1
0
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
