MITSUBISHI SEMICONDUCTOR TRIAC
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
160
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALL FINS ARE COPPER
AND ALUMINUM
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
140
120
100
80
140
120
RESISTIVE, INDUCTIVE LOADS
100
120 120 t2.3
100 100 t2.3
60 60 t2.3
80
60
40
20
0
60
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
40
20
0
0
2
4
6
8
10 12 14 16
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
105
7
103
7
5
4
TYPICAL EXAMPLE
TYPICAL EXAMPLE
5
3
2
3
104
7
5
3
2
2
102
7
103
7
5
5
4
3
3
2
2
102
101
–60–40–20 0 20 40 60 80 100120140
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
103
160
7
5
TYPICAL EXAMPLE
140
120
100
80
DISTRIBUTION
T+, G–
TYPICAL
EXAMPLE
2
3
2
102
7
5
3
2
60
101
7
5
40
3
2
T+
2
, G+ TYPICAL
, G– EXAMPLE
20
T–
2
100
0
–40
0
40
80
120
160
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
