MITSUBISHI SEMICONDUCTOR TRIAC
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
GATE CHARACTERISTICS
102
7
TYPICAL EXAMPLE
7
5
4
5
3
2
V
GM = 10V
3
I
RGT I, IRGT III
101
7
5
3
2
2
PGM = 5W
PG(AV) =
0.5W
102
7
V
GT = 1.5V
I
FGT I
I
GM = 2A
100
7
5
5
4
3
3
2
2
I
RGT I
I
FGT I,
I
RGT III
V
GD = 0.2V
10–1
101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20 0 20 40 60 80 100120140
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
102 2 3 5 7 103
2.4
2
103
TYPICAL EXAMPLE
7
5
4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
3
2
102
7
5
4
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
32
160
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
28
24
20
16
12
8
140
120
100
80
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
60
360°
40
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
4
20
0
0
0
2
4
6
8
10 12 14 16
0
2
4
6
8
10 12 14 16
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
