Linear Photodiode Array
Imagers
Figure 2a: Spectral Sensitivity Curve
100
100
90
90
Right Scale
Description (cont.)
80
80
70
60
50
40
30
20
P-series imagers combine high-perfor-
mance photodiodes with high-speed
CCD readout registers and a high-
sensitivity readout amplifier. Refer
to Figure 1 for construction details.
70
60
50
40
Left Scale
30
20
10
0
Light Detection Area
The light detection area in P-series
imagers is a linear array of contiguous
pinned photodiodes on 14 µm centers.
These photodiodes are constructed
using PerkinElmer’s advanced photo-
diode design that extends short-wave-
length sensitivity into the deep UV
below 250 nm, while preserving 100%
fill factor and delivering extremely
low image lag. This unique design
also avoids polysilicon layers in the
light detection area that reduces the
quantum efficiency of most CCD
10
0
1050
250
650
Wavelength (nm)
950
350
450
550
750
850
Figure 2b: Window Transmission Curve
100
Fused Silica
90
80
70
60
50
imagers. The P-series imagers are sup-
plied with glass windows for general
visible use, and fused silica windows
for use in the ultraviolet below 350 nm.
See Figure 2 for the sensitivity and
window transmission curves.
Glass
40
30
20
10
0
1050
650
850
950
150
250
350
450
550
750
Wavelength (nm)
For lowest lag, all P-series imagers
feature pinned photodiodes. Pinning,
which requires a special semiconduc-
tor process step, provides a uniform
internal voltage reference for the
charge stored in every photodiode.
This stable reference assures that
every photodiode is fully discharged
after every scan.
Photodiodes covered with light
pixels that assure uniform response
out to the last active photodiode.
Due to the potential for light leak-
age, the two dark pixels nearest
the transition pixels should not
be used as a dark reference.
shields included at one or both ends
of the imager provide a dark current
reference for clamping. These are
separated from the active photodi-
odes by two unshielded transition
Figure 1: Imager Functional Diagram
N = 512 for the RL0512P
N = 1024 for the RL1024P
N = 2048 for the RL2048P
Antiblooming/Exposure Control Gate
3
Isolation stages
10 Dark pixels (D1 ... D10)
2
Transition pixels (T1, T2)
D1 . . . . . . . . . . . . . . . . . . . .D10
T1 T2 1
2
3 . . . . . . . . .
N-1 N T3
T4 D11 . . . . . . . . . . . . . . . . . . . .D20
(Light shield ends between D10 and T1)
N
2
Active pixels (1...N)
Transition pixels (T3, T4)
(Light shield ends between T4 and D11)
10 Dark pixels (D11...D20) (Not used in RL0512P)
Transfer Gate
Output
2-Phase Buried Channel CCD Shift Register
Amp
3 CCD Isolation Stages
www.perkinelmer.com/opto
DSP-101 01H - 7/2002W Page 2
PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
