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C30810 参数 Datasheet PDF下载

C30810图片预览
型号: C30810
PDF下载: 下载PDF文件 查看货源
内容描述: N型硅PIN光电探测器 [N-Type Silicon PIN Photodetectors]
分类和应用: 半导体光电
文件页数/大小: 5 页 / 143 K
品牌: PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
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C30807, C30808, C30809, C30810, C30822, C30831  
Figure 2. Typical Dark Current vs. Ambient Temperature  
Figure 1. Typical Spectral Responsivity Characteristic  
Electrical Characteristics at T = 22°C At a DC Reverse Operating Voltage (V ) = 45 Volts2,  
A
R
unless otherwise specified  
Type C30810  
Typ  
Type C30822  
Typ  
Type C30831  
Typ  
Units  
Min  
Max  
Min  
Max  
Min  
Max  
Breakdown Voltage, VBR  
Responsivity:  
100  
-
-
100  
-
-
100  
-
-
V
At 900 nm  
At 1060 nm  
0.5  
0.1  
0.6  
0.15  
-
-
0.5  
0.1  
0.6  
0.15  
-
-
0.5  
0.1  
0.6  
0.15  
-
-
A/W  
A/W  
Quantum Efficiency:  
At 900 nm  
At 1060 nm  
70  
12  
83  
17  
-
-
-
-
83  
17  
-
-
-
-
83  
17  
-
-
%
%
Dark Current, id: See Figure 2  
At VR = 10V  
At VR = 45V  
-9  
-9  
-
-
8x10-8  
3x10-7  
4x10-7  
1.5x10-6  
-
-
1x10-8  
5x10-8  
5x10-8  
2.5x10-7  
-
-
1x10  
1x10  
5x10  
5x10  
A
A
-8  
-8  
Noise Current, In: See Figure 3  
f = 1000 Hz, f = 1.0 Hz  
Noise Equivalent Power (NEP):  
f = 1000 Hz, f = 1.0 Hz  
At 900 nm  
At 1060 nm  
Capacitance, Cd: See Figure 4  
Rise Time, tr:  
RL = 50 Ω, λ = 900 nm,  
10% to 90% points  
Fall Time:  
RL = 50 Ω, λ = 900 nm,  
10% to 90% points  
-
3x10-13 2.1x10-12  
-
1.3x10-13 9x10-13  
-
6x10-14 4.2x10-13  
A/Hz1/2  
-13  
1x10  
-13  
4x10  
2
-13  
8x10  
1/2  
W/Hz  
-
-
-
4.5x10-13 3.6x10-12  
2x10-12 1.6x10-11  
-
-
-
2x10-13 1.5x10-12  
-
1
-
8x10-13  
7x10-12  
-12  
3.2x10  
1/2  
W/Hz  
70  
12  
20  
90  
17  
30  
17  
20  
2.5  
pF  
ns  
ns  
-
-
-
-
7
12  
15  
-
-
3
6
5
10  
10  
Note 2. The recommended range of reverse operating voltage V at T = 22°C is 0 to 50 volts. However, when the devices are operated in the photovoltaic mode, i.e., at V = 0  
R
A
R
volts, some of the electrical characteristics will differ from those shown.