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C30810 参数 Datasheet PDF下载

C30810图片预览
型号: C30810
PDF下载: 下载PDF文件 查看货源
内容描述: N型硅PIN光电探测器 [N-Type Silicon PIN Photodetectors]
分类和应用: 半导体光电
文件页数/大小: 5 页 / 143 K
品牌: PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
 浏览型号C30810的Datasheet PDF文件第1页浏览型号C30810的Datasheet PDF文件第3页浏览型号C30810的Datasheet PDF文件第4页浏览型号C30810的Datasheet PDF文件第5页  
C30807, C30808, C30809, C30810, C30822, C30831  
Mechanical Characteristics  
Optical Characteristics  
Field of View: 1  
See Figure 5  
Photosensitive Surface:  
Shape -  
Approx.  
Full Angle For -  
Complete  
Partial  
All types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Circular  
Illuminatation  
Illuminatation  
Photosensitive Photosensitive  
Area -  
Surface  
Surface  
2
2
2
2
2
2
Type C30831 . . . . . . . . . . . . . . . . . . . . . . . . .0.2 mm  
Type C30807 . . . . . . . . . . . . . . . . . . . . . . . . .0.8 mm  
Type C30808 . . . . . . . . . . . . . . . . . . . . . . . . . .5 mm  
Type C30822 . . . . . . . . . . . . . . . . . . . . . . . . .20 mm  
Type C30809 . . . . . . . . . . . . . . . . . . . . . . . . .50 mm  
Type C30810 . . . . . . . . . . . . . . . . . . . . . . . .100 mm  
Type C30831  
Type C30807  
Type C30808  
Type C30822  
Type C30809  
Type C30810  
70  
62  
72  
104  
74  
74  
84 deg  
90 deg  
120 deg  
144 deg  
148 deg  
140 deg  
Note 1. The values specified for field of view are approximate and are critically  
dependent on the dimensional tolerances of the package components parts.  
Electrical Characteristics at T = 22°C At a DC Reverse Operating Voltage (V ) = 45 Volts2,  
A
R
unless otherwise specified  
Type C30807  
Type C30808  
Typ  
Type C30839  
Typ  
Units  
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Breakdown Voltage, VBR  
Responsivity:  
100  
-
-
100  
-
-
100  
-
-
V
At 900 nm  
At 1060 nm  
0.5  
0.1  
0.6  
0.15  
-
-
0.5  
0.1  
0.6  
0.15  
-
-
0.5  
0.1  
0.6  
0.15  
-
-
A/W  
A/W  
Quantum Efficiency:  
At 900 nm  
At 1060 nm  
70  
12  
85  
15  
-
-
70  
12  
83  
17  
-
-
70  
12  
83  
17  
-
-
%
%
Dark Current, id: See Figure 2  
At VR = 10 V  
At VR = 45V  
-7  
1.3x10  
-
-
2x10-9  
1x10-8  
1x10-8  
5x10-8  
-
-
5x10-9  
3x10-8  
2.5x10-8  
1.5x10-7  
-
-
2.5x10-8  
7x10-8  
A
A
-7  
3.5x10  
Noise Current, In: See Figure 3  
f = 1000 Hz, f = 1.0 Hz  
Noise Equivalent Power (NEP):  
f = 1000 Hz, f = 1.0 Hz  
At 900 nm  
At 1060 nm  
Capacitance, Cd: See Figure 4  
Rise Time, tr:  
-
6x10-14  
4.2x10-13  
-
1x10-13  
7x10-13  
-
1.5x10-13 1.1x10-12  
A/Hz1/2  
-
-
-
-
-
-
1.5x10  
6.5x10  
6
1.2x10  
5.2x10  
10  
-
-
-
2x10-13  
1x10-12  
35  
1.6x10-12  
8x10-12  
45  
W/Hz1/2  
W/Hz1/2  
pF  
-13  
1x10  
-13  
8x10  
-13  
-12  
-13  
4x10  
-12  
3.2x10  
-13  
-12  
2.5  
3
RL = 50 Ω, λ = 900 nm,  
10% to 90% points  
Fall Time:  
RL = 50 Ω, λ = 900 nm,  
10% to 90% points  
-
-
3
5
-
-
5
8
8
-
-
10  
15  
15  
20  
ns  
ns  
6
10  
13  
Note 2. The recommended range of reverse operating voltage V at T = 22°C is 0 to 50 volts. However, when the devices are operated in the photovoltaic mode, i.e., at V = 0  
R
A
R
volts, some of the electrical characteristics will differ from those shown.