C30659-900-1060-1550nm Series
Table 4. Absolute - Maximum Ratings, Limiting Values
C30659-900
(Si)
C30659-1060
C30659-1550
(InGaAs)
Typ
(Si)
Typ
Min
Typ
Max
Min
Max
Min
Max
Photodiode Bias Voltage:
At TA = +70°C
-
-
-
-
600
300
-
-
-
-
600
300
-
-
-
-
100
50
V
V
At TA = -40°C
Incident Radiant Flux ΦM
average
peak
-
-
-
-
0.11
502
-
-
-
-
0.11
502
-
-
-
-
21
mW
mW
502
Case Temperature:
Storage, Tstg
-50
-40
-
-
100
70
-50
-40
-
-
100
70
-50
-40
-
-
100
70
°C
°C
Operating, TA
Preamplifier Voltage:
-4.5
-
-5.5
-4.5
-
-5.5
-4.5
-
-5.5
V
Notes: 1. Based on 0.5W electrical power on high voltage supply.
2. Test with pulse width of 50 ns.
Figure 5. Mechanical Characteristics
PIN CONNECTIONS
1: Signal Output
2: No Connection
3: -Vcc Negative Amplifier Bias
4: Positive high voltage
5: No Connection
6: Case Ground
7: No Connection
8: Temp. Sensing Diode - Anode
9: Temp. Sensing Diode - Cathode
10: Ground, DC returns
11: No Connection
12: +Vcc Positive Amplifier Bias
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