C30659-900nm Series
Table 1. Electrical Characteristics at TA=22ºC
Test Conditions: Ambient Temperature, Vamp
=
5 Volts, HV = +VR (see Note 1), RL = 50Ω AC Coupled
900nm Silicon APD
Detector Type
C30659-900-R8A
C30659-900-R5B
(Si APD C30817E)
(Si APD C30902E)
Min
Typ
0.8
0.5
50
Max
Min
Typ
0.5
Max
Active Diameter
Active Area
mm
mm2
MHz
0.2
Bandwidth Range
200
Temperature Coefficient of VR
for constant Gain
VR for specified responsivity
-
2.2
Note 1
-
-
0.7
Note 1
-
V/°C
V
275
435
180
260
Temperature sensor sensitivity
-1.8
-2.1
-2.4
-1.8
-2.1
-2.4
mV/°C
Responsivity
At 830nm
At 900nm
RF (Internal Feedback Resistor)
-
-
-
2700
3000
82
-
-
-
-
-
-
460
400
12
-
-
-
kV/W
kV/W
k Ω
Noise Equivalent Power (NEP) (note 3)
f - 100 kHz, ∆f = 1.0 Hz
At 830nm
At 900nm
Output Spectral Noise Voltage:
-
-
14
12
17
15
-
-
35
40
55
65
fW/√Hz
fW/√Hz
(f = 100 kHz - f-3dB
Output Impedance
System Bandwidth, f-3dB
)
-
35
45
-
15
25
nV/√Hz
33
40
40
50
50
-
33
175
40
200
50
-
Ω
MHz
Rise Time, tr (λ = 830 and 900nm)
10% to 90% points
Fall Time, tf (λ = 830 and 900nm)
90% to 10% points
-
-
7
7
-
-
-
-
2
2
-
-
ns
ns
ns
V
Recovery time after overload (note 4)
Output Voltage Swing (1kΩ load) (note 5)
Output Voltage Swing (50Ω load) (note 5)
Output Offset Voltage
-
-
150
-
-
-
150
-
2
3
2
3
0.7
-1
-
0.9
0.25
20
10
-
0.7
-1
-
0.9
0.25
20
10
-
V
1
1
V
Positive Supply Current (V+)
35
20
35
20
mA
mA
Negative Supply Current (V-)
-
-
Notes: 1. A specific value of VR is supplied with each device. The VR value will be within the specified ranges.
2. If = 0.1 mA, 25°C
3. NEPmax is the Maximum Output Spectral Noise Voltage max divided by the typical Responsivity.
4. 0dBm, 250ns pulse.
5. Pulsed operation.
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