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MD56V62160E-7TA 参数 Datasheet PDF下载

MD56V62160E-7TA图片预览
型号: MD56V62160E-7TA
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 34 页 / 528 K
品牌: OKI [ OKI ELECTRONIC COMPONETS ]
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FEDD56V62160E-01  
OKI Semiconductor  
MD56V62160E  
PIN DESCRIPTION  
CLK  
Fetches all inputs at the “H” edge.  
Disables or enables device operation by asserting or deactivating all inputs except CLK, CKE,  
UDQM and LDQM.  
CS  
Masks system clock to deactivate the subsequent CLK operation.  
CKE  
If CKE is deactivated, system clock will be masked so that the subsequent CLK operation is  
deactivated. CKE should be asserted at least one cycle prior to a new command.  
Row & column multiplexed.  
Address  
Row address  
Column Address  
: RA0 – RA11  
: CA0 – CA7  
A13, A12  
Slects bank to be activated during row address latch time and selects bank for precharge and  
read/write during column address latch time.  
(BA0, BA1)  
RAS  
CAS  
WE  
Functionality depends on the combination. For details, see the function truth table.  
Masks the read data of two clocks later when UDQM and LDQM are set “H” at the “H” edge of the  
clock signal. Masks the write data of the same clock when UDQM and LDQM are set “H” at the “H”  
edge of the clock signal. UDQM controls upper byte and LDQM controls lower byte.  
UDQM,  
LDQM  
DQi  
Data inputs/outputs are multiplexed on the same pin.  
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