¡ Semiconductor
AC Characteristics (1/2)
MD51V64405
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3
Parameter
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
Access Time from
RAS
Access Time from
CAS
Access Time from Column Address
Access Time from
CAS
Precharge
Access Time from
OE
Output Low Impedance Time from
CAS
Data Output Hold After
CAS
Low
Symbol
MD51V64405
-50
Min.
Max.
—
—
—
—
50
13
25
30
13
—
—
13
13
13
13
50
64
—
10,000
100,000
MD51V64405
-60
Min.
104
135
25
68
—
—
—
—
—
0
5
0
0
0
0
1
—
40
60
60
10
10
10
10
40
5
35
5
14
12
0
10
0
10
30
Max.
—
—
—
—
60
15
30
35
15
—
—
15
15
15
15
50
64
—
10,000
100,000
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
6
7, 8
7, 8
7
7
3
4, 5, 6
4, 5
4, 6
4
4
4
t
RC
t
RWC
t
HPC
t
HPRWC
t
RAC
t
CAC
t
AA
t
CPA
t
OEA
t
CLZ
t
DOH
84
110
20
58
—
—
—
—
—
0
5
0
0
0
0
1
—
30
50
50
7
7
7
7
35
5
30
5
11
9
0
7
0
7
25
CAS
to Data Output Buffer Turn-off Delay Time t
CEZ
RAS
to Data Output Buffer Turn-off Delay Time t
REZ
OE
to Data Output Buffer Turn-off Delay Time t
OEZ
WE
to Data Output Buffer Turn-off Delay Time t
WEZ
Transition Time
Refresh Period
RAS
Precharge Time
RAS
Pulse Width
RAS
Hold Time
RAS
Hold Time referenced to
OE
CAS
Pulse Width
CAS
Hold Time
CAS
to
RAS
Precharge Time
RAS
Hold Time from
CAS
Precharge
OE
Hold Time from
CAS
(DQ Disable)
RAS
to
CAS
Delay Time
RAS
to Column Address Delay Time
Row Address Set-up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
Column Address to
RAS
Lead Time
t
T
t
REF
t
RP
t
RAS
t
RSH
t
ROH
t
CAS
t
CSH
t
CRP
t
RHCP
t
CHO
t
RCD
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
RAS
Pulse Width (Fast Page Mode with EDO) t
RASP
—
—
—
10,000
—
—
—
—
37
25
—
—
—
—
—
—
—
—
10,000
—
—
—
—
45
30
—
—
—
—
—
CAS
Precharge Time (Fast Page Mode with EDO) t
CP
6/15
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