IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
400
300
200
100
0
10
V
= 0V,
f = 1MHz
C
GS
C
= C + C
SHORTED
iss
gs
gd ,
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
°
T = 150 C
J
C
iss
1
°
T = 25 C
J
C
C
oss
V
= 0 V
GS
rss
0.1
1.0
2.0
3.0
4.0
5.0
1
10
100
V
,Source-to-Drain Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
SD
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
100
I
D
= -1.7 A
OPERATION IN THIS AREA LIMITED
V
V
V
=-200V
=-125V
=-50V
DS
DS
DS
BY R
DS(on)
16
12
8
10
100us
1
1ms
4
10ms
°
T = 25 C
J
C
°
T = 150 C
FOR TEST CIRCUIT
SEE FIGURE 13
Single Pulse
0
0.1
0
3
6
9
12
15
10
100
1000
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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