Technische Information / technical information
IGBT-Module
IGBT-modules
FZ1200R33KF2C
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ† = f (t)
V•Š = ±15 V, I† = 1200 A, V†Š = 1800 V, TÝÎ = 125°C,
C•Š = 220 nF
10000
100
EÓÒ
EÓËË
ZÚÌœ† : IGBT
8000
6000
4000
2000
0
10
1
i:
1
2
3
rÍ[K/kW]: 3,825 2,125 0,51 2,04
4
τÍ[s]:
0,03 0,1
0,3
1
0,1
0,001
0
1
2
3
4
5
6
R• [Â]
7
8
9
10 11 12
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlaßkennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 1,2 Â, TÝÎ = 125°C, C•Š = 220 nF
3000
2400
1800
1200
600
2400
TÝÎ = 25°C
TÝÎ = 125°C
2000
1600
1200
800
400
0
I†, Modul
I†, Chip
0
0
500
1000 1500 2000 2500 3000 3500
V†Š [V]
0,0
0,5
1,0
1,5
2,0
VΠ[V]
2,5
3,0
3,5
4,0
prepared by: Jürgen Biermann
approved by: Christoph Lübke
date of publication: 3/18/2003
revision: 2.0
5
EUPEC [ EUPEC GMBH ]
