Technische Information / technical information
IGBT-Module
IGBT-modules
FZ1200R33KF2C
Vorläufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
TÝÎ = -25°C
3300
Vçç¢
3300
V
A
Dauergleichstrom
DC forward current
IŒ
IŒç¢
I²t
1200
2400
500
Periodischer Spitzenstrom
repetitive peak forward current
t« = 1 ms
A
Grenzlastintegral
I²t - value
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
TÝÎ = 125°C
kA²s
kW
µs
Spitzenverlustleistung
maximum power dissipation
P笢
tŒÓÒ ÑÍÒ
2400
10,0
Mindesteinschaltdauer
minimum turn-on time
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 1200 A, V•Š = 0 V, TÝÎ = 25°C
IŒ = 1200 A, V•Š = 0 V, TÝÎ = 125°C
VŒ
Iç¢
QØ
2,80 3,50
2,80 3,50
V
V
Rückstromspitze
peak reverse recovery current
IŒ = 1200 A, - diŒ/dt = 6800 A/µs
Vç = 1800 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 1800 V, V•Š = -15 V, TÝÎ = 125°C
1700
2000
A
A
Sperrverzögerungsladung
recovered charge
IŒ = 1200 A, -diŒ/dt = 6800 A/µs
Vç = 1800 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 1800 V, V•Š = -15 V, TÝÎ = 125°C
710
1300
µC
µC
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 1200 A, -diŒ/dt = 6800 A/µs
Vç = 1800 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 1800 V, V•Š = -15 V, TÝÎ = 125°C
EØþÊ
735
1550
mJ
mJ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
17,0 K/kW
K/kW
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
/
12,0
ð«ÈÙÚþ = 1 W/(m·K)
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Jürgen Biermann
approved by: Christoph Lübke
date of publication: 3/18/2003
revision: 2.0
2
EUPEC [ EUPEC GMBH ]
