Technische Information / technical information
IGBT-Module
IGBT-modules
FP50R06KE3G
Vorläufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
600
50
V
A
A
Dauergleichstrom
DC forward current
IŒ
IŒç¢
I²t
Periodischer Spitzenstrom
t« = 1 ms
100
repetitive peak forward current
Grenzlastintegral
I²t - value
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
Vç = 0 V, t« = 10 ms, TÝÎ = 150°C
145
140
A²s
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 50 A, V•Š = 0 V
IŒ = 50 A, V•Š = 0 V
IŒ = 50 A, V•Š = 0 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
1,55 1,95
1,50
1,45
V
V
V
VŒ
Iç¢
QØ
Rückstromspitze
peak reverse recovery current
IŒ = 50 A, - diŒ/dt = 900 A/µs (TÝÎ=150°C)
Vç = 300 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
27,0
34,0
36,0
A
A
A
Sperrverzögerungsladung
recovered charge
IŒ = 50 A, - diŒ/dt = 900 A/µs (TÝÎ=150°C)
Vç = 300 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
1,25
2,85
3,55
µC
µC
µC
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 50 A, - diŒ/dt = 900 A/µs (TÝÎ=150°C)
Vç = 300 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
0,20
0,50
0,60
mJ
mJ
mJ
EØþÊ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
1,20 K/W
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
/
0,255
ð«ÈÙÚþ = 1 W/(m·K)
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Andreas Schulz
approved by: Robert Severin
date of publication: 2006-6-16
revision: 2.0
2
EUPEC [ EUPEC GMBH ]
