Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12YT3_B4
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ™ = f (t)
V•Š = ±15 V, I† = 10 A, V†Š = 600 V
4,0
10
EÓÒ, TÝÎ = 125°C
EÓËË, TÝÎ = 125°C
ZÚÌœ™ : IGBT
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
1
i:
rÍ[K/W]: 0,133
τÍ[s]:
1
2
0,45
3
1,188
0,000352 0,0064823 0,1106875 0,1535065
4
0,379
0,1
0,001
50
100
150
200
R• [Â]
250
300
350
400
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlasskennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 125°C
22
20
18
16
14
12
10
8
20
18
16
14
12
10
8
TÝÎ = 25°C
TÝÎ = 125°C
6
6
4
4
I†, Modul
I†, Chip
2
2
0
0
0
200
400
600 800
V†Š [V]
1000 1200 1400
0,0
0,5
1,0
1,5
VΠ[V]
2,0
2,5
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2005-6-15
revision: 2.0
7
EUPEC [ EUPEC GMBH ]
