Technische Information / technical information
IGBT-Module
IGBT-modules
FF150R12KE3G
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
IŒ
1200
150
V
A
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
t« = 1 ms
IŒç¢
I²t
300
A
repetitive peak forward current
Grenzlastintegral
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
I²t - value
4600
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 150 A, V•Š = 0 V
IŒ = 150 A, V•Š = 0 V
TÝÎ = 25°C
TÝÎ = 125°C
1,65 2,15
1,65
V
V
VŒ
Rückstromspitze
peak reverse recovery current
IŒ = 150 A, - diŒ/dt = 1500 A/µs
Vç = 600 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
105
135
A
A
Iç¢
Sperrverzögerungsladung
recovered charge
IŒ = 150 A, - diŒ/dt = 1500 A/µs
Vç = 600 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
15,0
28,0
µC
µC
QØ
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 150 A, - diŒ/dt = 1500 A/µs
Vç = 600 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
7,00
12,0
mJ
mJ
EØþÊ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
0,30 K/W
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
/
0,06
ð«ÈÙÚþ = 1 W/(m·K)
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Mark Münzer
date of publication: 2004-6-21
revision: 3.2
approved by: Wilhelm Rusche
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