Technische Information / technical information
IGBT-Module
IGBT-modules
FF100R12YT3
Vorläufige Daten
preliminary data
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (IŒ)
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (R•)
R•ÓÒ = 6,8 Â, V†Š = 600 V
IŒ = 100 A, V†Š = 600 V
14
12
EØþÊ, TÝÎ = 125°C
EØþÊ, TÝÎ = 125°C
12
10
8
10
8
6
6
4
4
2
2
0
0
0
20 40 60 80 100 120 140 160 180 200
IŒ [A]
0
10
20
30
R• [Â]
40
50
60
70
Transienter Wärmewiderstand Diode-Wechselr.
transient thermal impedance diode-inverter
ZÚÌœ™ = f (t)
NTC-Temperaturkennlinie (typisch)
NTC-temperature characteristic (typical)
R = f (T)
1
100000
ZÚÌœ™ : Diode
RÚáÔ
10000
1000
100
0,1
i:
1
2
3
rÍ[K/W]: 0,02376 0,0495 0,22968 0,35706
4
τÍ[s]:
0,0005 0,005 0,05
0,2
0,01
0,001
0,01
0,1
t [s]
1
10
0
20
40
60
80
T† [°C]
100 120 140 160
prepared by: Christoph Messelke
approved by: Marc Buschkühle
date of publication: 2006-11-28
revision: 2.1
6