BSM 75 GB 170 DN2
Typ. switching time
Typ. switching time
I = f (I ) , inductive load , T = 125°C
t = f (R ) , inductive load , T = 125°C
C
j
G
j
par.: V = 1200 V, V = ± 15 V, R = 22
par.: V = 1200 V, V = ± 15 V, I = 75 A
W
CE
10 4
GE
G
CE
10 4
GE
C
ns
ns
t
t
tdoff
10 3
10 3
tdoff
tdon
tdon
tr
tr
10 2
10 2
tf
tf
10 1
10 1
0
20 40 60 80 100 120 140
A
IC
180
0
20
40
60
80
120
W
RG
Typ. switching losses
E = f (I ) , inductive load , T = 125°C
Typ. switching losses
E = f (R ) , inductive load , T = 125°C
C
j
G
j
par.: V = 1200 V, V = ± 15 V, R = 22 W
par.: V = 1200 V, V = ± 15 V, I = 75 A
CE
GE
G
CE
GE
C
200
200
mWs
160
140
120
100
80
mWs
160
140
120
100
80
Eon
Eon
E
E
60
60
Eoff
40
40
Eoff
20
0
20
0
0
20 40 60 80 100 120 140
A
IC
180
0
20
40
60
80
120
W
RG
7
Oct-27-1997