BSM 75 GB 170 DN2
Power dissipation
Safe operating area
I = ¦ (V
P
= ¦ (T )
)
CE
tot
C
C
parameter: T £ 150 °C
parameter: D = 0, T = 25°C , T £ 150 °C
C j
j
10 3
650
W
A
t
= 800.0ns
1 µs
p
550
Ptot
IC
10 2
10 1
10 0
10 -1
500
450
400
350
300
250
200
150
100
10 µs
100 µs
1 ms
10 ms
DC
50
0
0
20
40
60
80
100 120 °C
160
10 0
10 1
10 2
10 3
V
TC
VCE
Collector current
I = (T )
Transient thermal impedance IGBT
= (t )
Z
¦
¦
p
C
C
th JC
parameter: V
15 V , T 150 °C
parameter: D = t / T
³
£
GE
j
p
10 0
120
A
K/W
100
IC
ZthJC
90
10 -1
80
70
60
50
40
30
20
D = 0.50
0.20
10 -2
0.10
0.05
0.02
0.01
single pulse
10
0
10 -3
10 -5
0
20
40
60
80
100 120 °C
160
10 -4
10 -3
10 -2
10 -1 s 10 0
TC
tp
4
Oct-27-1997
EUPEC [ EUPEC GMBH ]
