BSM 15 GD 120 DN2
Power dissipation
Safe operating area
ƒ
ƒ
P
= (T )
I = (V
)
CE
tot
C
C
≤
≤
parameter: D = 0, T = 25°C , T 150 °C
C j
parameter: T 150 °C
j
10 2
150
W
t
= 11.0µs
p
130
A
120
110
100
90
Ptot
IC
10 1
100 µs
80
70
60
1 ms
10 0
50
40
30
10 ms
20
10
0
10 -1
DC
10 3
0
20
40
60
80
100 120 °C
160
10 0
10 1
10 2
V
TC
VCE
Collector current
Transient thermal impedance IGBT
ƒ
ƒ
I = (T )
Z
= (t )
C
C
th JC
p
≥
≤
parameter: V
15 V , T 150 °C
parameter: D = t / T
GE
j
p
10 0
26
A
K/W
22
IC
ZthJC
20
18
16
14
12
10
8
10 -1
D = 0.50
0.20
10 -2
0.10
0.05
6
0.02
single pulse
0.01
4
2
0
10 -3
0
20
40
60
80
100 120 °C
160
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
TC
tp
4
Oct-20-1997
EUPEC [ EUPEC GMBH ]
