BSM 15 GD 120 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
= V
I = 0.6 mA
4.5
5.5
6.5
GE
CE, C
Collector-emitter saturation voltage
CE(sat)
V
V
= 15 V, I = 15 A, T = 25 °C
-
-
2.5
3.1
3
GE
GE
C
j
= 15 V, I = 15 A, T = 125 °C
3.7
C
j
Zero gate voltage collector current
I
mA
nA
CES
V
V
= 1200 V, V = 0 V, T = 25 °C
-
-
0.3
1.2
0.5
-
CE
CE
GE
j
= 1200 V, V = 0 V, T = 125 °C
GE
j
Gate-emitter leakage current
= 20 V, V = 0 V
I
GES
V
-
-
150
GE
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 15 A
5.5
-
-
-
-
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
pF
iss
V
-
-
-
1000
150
70
CE
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
oss
rss
V
CE
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
CE
GE
2
Oct-20-1997
EUPEC [ EUPEC GMBH ]
