Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM100GP60
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min. typ. max.
Modulinduktivität
stray inductance module
Ls CE
-
-
-
100
-
nH
Modul Leitungswiderstand, Anschlüsse-Chip
TC = 25°C
RCC'+EE'
7
mW
lead resistance, terminals-chip
min. typ. max.
Diode Wechselrichter/ Diode Inverter
VGE = 0V, Tvj = 25°C,
VGE = 0V, Tvj = 125°C,
IF =
IF =
VF
IRM
Qr
100 A
-
-
1,25
1,2
1,7
-
V
V
Durchlaßspannung
forward voltage
100 A
IF=INenn
,
- diF/dt =
2200A/µs
300 V
Rückstromspitze
peak reverse recovery current
VGE = -10V, Tvj = 25°C, VR
VGE = -10V, Tvj = 125°C, VR
=
=
-
-
68
90
-
-
A
A
300 V
IF=INenn
,
- diF/dt =
2200A/µs
300 V
Sperrverzögerungsladung
recovered charge
VGE = -10V, Tvj = 25°C, VR
VGE = -10V, Tvj = 125°C, VR
=
=
-
-
6,2
-
-
µAs
µAs
300 V
10,5
IF=INenn
,
- diF/dt =
2200A/µs
300 V
Abschaltenergie pro Puls
reverse recovery energy
VGE = -10V, Tvj = 25°C, VR
VGE = -10V, Tvj = 125°C, VR
=
=
ERQ
-
-
1,3
2,2
-
-
mWs
mWs
300 V
min. typ. max.
Transistor Brems-Chopper/ Transistor Brake-Chopper
VGE = 15V, Tvj = 25°C, IC =
VGE = 15V, Tvj = 125°C, IC =
VCE sat
50,0 A
50,0 A
-
-
1,95
2,2
2,55
-
V
V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE
,
Tvj = 25°C, IC =
VGE(TO)
1 mA
4,5
-
5,5
2,8
6,5
-
V
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Eingangskapazität
input capacitance
Cies
ICES
nF
VGE = 0V, Tvj = 25°C, VCE
VGE = 0V, Tvj = 125°C, VCE
=
=
600 V
600 V
-
-
1,5
2,0
500
-
µA
Kollektor-Emitter Reststrom
collector-emitter cut-off current
mA
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
IGES
-
-
300
nA
min. typ. max.
Diode Brems-Chopper/ Diode Brake-Chopper
Tvj = 25°C,
IF =
IF =
VF
50,0 A
50,0 A
-
-
1,45
1,4
1,8
-
V
V
Durchlaßspannung
forward voltage
Tvj = 125°C,
min. typ. max.
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
TC = 25°C
R25
-
5
-
kW
%
Abweichung von R100
deviation of R100
TC = 100°C, R100 = 493 W
TC = 25°C
-5
5
DR/R
P25
Verlustleistung
power dissipation
20
mW
K
B-Wert
B-value
R2 = R1 exp [B(1/T2 - 1/T1)]
B25/50
3375
3(11)
DB-PIM-10.xls
EUPEC [ EUPEC GMBH ]
