Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM100GP60
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min. typ. max.
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Tvj = 150°C,
Tvj = 150°C
Tvj = 150°C
Tvj = 150°C,
TC = 25°C
IF =
VF
V(TO)
rT
100 A
-
-
-
-
-
1,16
-
0,8
4,8
-
V
Schleusenspannung
threshold voltage
-
-
V
Ersatzwiderstand
slope resistance
mW
mA
mW
Sperrstrom
reverse current
VR
=
IR
1600 V
4
4
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
RAA'+CC'
-
min. typ. max.
Transistor Wechselrichter/ Transistor Inverter
VGE = 15V, Tvj = 25°C, IC =
VGE = 15V, Tvj = 125°C, IC =
VCE sat
100 A
100 A
-
-
1,95
2,2
2,45
-
V
V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE
,
Tvj = 25°C, IC =
VGE(TO)
1,5 mA
4,5
-
5,5
4,3
6,5
-
V
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Eingangskapazität
input capacitance
Cies
ICES
nF
VGE = 0V, Tvj = 25°C, VCE
VGE = 0V, Tvj =125°C, VCE
=
=
600 V
600 V
-
-
3,0
4,0
500
-
µA
Kollektor-Emitter Reststrom
collector-emitter cut-off current
mA
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE =20V, Tvj =25°C
IC = INenn VCC
IGES
-
-
300
nA
,
=
=
=
=
=
=
=
=
=
=
=
=
=
=
300 V
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
VGE = ±15V, Tvj = 25°C, RG
VGE = ±15V, Tvj = 125°C, RG
td,on
15 Ohm
15 Ohm
300 V
-
-
50
45
-
-
ns
ns
IC = INenn
,
VCC
Anstiegszeit (induktive Last)
rise time (inductive load)
VGE = ±15V, Tvj = 25°C, RG
VGE = ±15V, Tvj = 125°C, RG
tr
15 Ohm
15 Ohm
300 V
-
-
65
65
-
-
ns
ns
IC = INenn
,
VCC
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
VGE = ±15V, Tvj = 25°C, RG
VGE = ±15V, Tvj = 125°C, RG
td,off
15 Ohm
15 Ohm
300 V
-
-
260
285
-
-
ns
ns
IC = INenn
,
VCC
Fallzeit (induktive Last)
fall time (inductive load)
VGE = ±15V, Tvj = 25°C, RG
VGE = ±15V, Tvj = 125°C, RG
tf
15 Ohm
15 Ohm
300 V
-
-
35
45
-
-
ns
ns
IC = INenn
VGE = ±15V, Tvj = 125°C, RG
LS =
,
VCC
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Eon
Eoff
ISC
15 Ohm
50 nH
-
-
-
4,2
3,2
400
-
-
-
mWs
mWs
A
IC = INenn
,
VCC
=
=
300 V
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
VGE = ±15V, Tvj = 125°C, RG
15 Ohm
50 nH
LS =
t
P £ 10µs,
V
GE £ 15V, RG
VCC
=
=
15 Ohm
360 V
Kurzschlußverhalten
SC Data
Tvj£125°C,
dI/dt = 4000 A/µs
2(11)
DB-PIM-10.xls
EUPEC [ EUPEC GMBH ]
