Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM100GB120DLC
vorläufige Daten
preliminary data
Charakteristische Werte / Characteristic values
min. typ. max.
Transistor / Transistor
IC = 100A, VCE = 600V
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
V
GE = ±15V, RG = 6,8Ω, Tvj = 25°C
VGE = ±15V, RG = 6,8Ω, Tvj = 125°C
C = 100A, VCE = 600V
GE = ±15V, RG = 6,8Ω, Tvj = 25°C
VGE = ±15V, RG = 6,8Ω, Tvj = 125°C
C = 100A, VCE = 600V
GE = ±15V, RG = 6,8Ω, Tvj = 25°C
VGE = ±15V, RG = 6,8Ω, Tvj = 125°C
C = 100A, VCE = 600V
GE = ±15V, RG = 6,8Ω, Tvj = 25°C
VGE = ±15V, RG = 6,8Ω, Tvj = 125°C
td,on
-
-
0,06
0,06
-
-
µs
µs
I
Anstiegszeit (induktive Last)
rise time (inductive load)
V
tr
-
-
0,05
0,05
-
-
µs
µs
I
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
V
td,off
-
-
0,35
0,40
-
-
µs
µs
I
Fallzeit (induktive Last)
fall time (inductive load)
V
tf
-
-
0,06
0,08
-
-
µs
µs
I
C = 100A, VCE = 600V, VGE = 15V
RG = 6,8W, Tvj = 125°C, LS = 60nH
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Eon
-
-
10
12
-
-
mWs
mWs
IC = 100A, VCE = 600V, VGE = 15V
G = 6,8Ω, Tvj = 125°C, LS = 60nH
P ≤ 10µsec, VGE ≤ 15V, RG = 6,8Ω
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
R
Eoff
t
Kurzschlußverhalten
SC Data
TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt
ISC
-
-
650
25
-
-
A
Modulinduktivität
stray inductance module
LsCE
nH
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
TC=25°C
RCC‘+EE‘
-
0,60
-
mΩ
Charakteristische Werte / Characteristic values
min. typ. max.
Diode / Diode
IF = 100A, VGE = 0V, Tvj = 25°C
Durchlaßspannung
VF
IRM
Qr
-
1,8
2,3
V
V
forward voltage
IF = 100A, VGE = 0V, Tvj = 125°C
-
1,7
I
F = 100A, - diF/dt = 2700A/µsec
R = 600V, VGE = -15V, Tvj = 25°C
VR = 600V, VGE = -15V, Tvj = 125°C
F = 100A, - diF/dt = 2700A/µsec
R = 600V, VGE = -15V, Tvj = 25°C
VR = 600V, VGE = -15V, Tvj = 125°C
F = 100A, - diF/dt = 2700A/µsec
R = 600V, VGE = -15V, Tvj = 25°C
Rückstromspitze
peak reverse recovery current
V
-
-
125
155
-
-
A
A
I
Sperrverzögerungsladung
recovered charge
V
-
-
12
22
-
-
µAs
µAs
I
Abschaltenergie pro Puls
reverse recovery energy
V
Erec
-
-
4
9
-
-
mWs
mWs
VR = 600V, VGE = -15V, Tvj = 125°C
2(8)
DB_BSM100GB120DLC.xls