欢迎访问ic37.com |
会员登录 免费注册
发布采购

BSM100GB120DLC 参数 Datasheet PDF下载

BSM100GB120DLC图片预览
型号: BSM100GB120DLC
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块 [IGBT-Modules]
分类和应用: 晶体晶体管双极性晶体管局域网
文件页数/大小: 8 页 / 87 K
品牌: EUPEC [ EUPEC GMBH ]
 浏览型号BSM100GB120DLC的Datasheet PDF文件第1页浏览型号BSM100GB120DLC的Datasheet PDF文件第3页浏览型号BSM100GB120DLC的Datasheet PDF文件第4页浏览型号BSM100GB120DLC的Datasheet PDF文件第5页浏览型号BSM100GB120DLC的Datasheet PDF文件第6页浏览型号BSM100GB120DLC的Datasheet PDF文件第7页浏览型号BSM100GB120DLC的Datasheet PDF文件第8页  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
BSM100GB120DLC  
vorläufige Daten  
preliminary data  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 100A, VCE = 600V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
V
GE = ±15V, RG = 6,8, Tvj = 25°C  
VGE = ±15V, RG = 6,8, Tvj = 125°C  
C = 100A, VCE = 600V  
GE = ±15V, RG = 6,8, Tvj = 25°C  
VGE = ±15V, RG = 6,8, Tvj = 125°C  
C = 100A, VCE = 600V  
GE = ±15V, RG = 6,8, Tvj = 25°C  
VGE = ±15V, RG = 6,8, Tvj = 125°C  
C = 100A, VCE = 600V  
GE = ±15V, RG = 6,8, Tvj = 25°C  
VGE = ±15V, RG = 6,8, Tvj = 125°C  
td,on  
-
-
0,06  
0,06  
-
-
µs  
µs  
I
Anstiegszeit (induktive Last)  
rise time (inductive load)  
V
tr  
-
-
0,05  
0,05  
-
-
µs  
µs  
I
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
V
td,off  
-
-
0,35  
0,40  
-
-
µs  
µs  
I
Fallzeit (induktive Last)  
fall time (inductive load)  
V
tf  
-
-
0,06  
0,08  
-
-
µs  
µs  
I
C = 100A, VCE = 600V, VGE = 15V  
RG = 6,8W, Tvj = 125°C, LS = 60nH  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
Eon  
-
-
10  
12  
-
-
mWs  
mWs  
IC = 100A, VCE = 600V, VGE = 15V  
G = 6,8, Tvj = 125°C, LS = 60nH  
P 10µsec, VGE 15V, RG = 6,8Ω  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
R
Eoff  
t
Kurzschlußverhalten  
SC Data  
TVj125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt  
ISC  
-
-
650  
25  
-
-
A
Modulinduktivität  
stray inductance module  
LsCE  
nH  
Modul Leitungswiderstand, Anschlüsse – Chip  
module lead resistance, terminals – chip  
TC=25°C  
RCC‘+EE‘  
-
0,60  
-
mΩ  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Diode / Diode  
IF = 100A, VGE = 0V, Tvj = 25°C  
Durchlaßspannung  
VF  
IRM  
Qr  
-
1,8  
2,3  
V
V
forward voltage  
IF = 100A, VGE = 0V, Tvj = 125°C  
-
1,7  
I
F = 100A, - diF/dt = 2700A/µsec  
R = 600V, VGE = -15V, Tvj = 25°C  
VR = 600V, VGE = -15V, Tvj = 125°C  
F = 100A, - diF/dt = 2700A/µsec  
R = 600V, VGE = -15V, Tvj = 25°C  
VR = 600V, VGE = -15V, Tvj = 125°C  
F = 100A, - diF/dt = 2700A/µsec  
R = 600V, VGE = -15V, Tvj = 25°C  
Rückstromspitze  
peak reverse recovery current  
V
-
-
125  
155  
-
-
A
A
I
Sperrverzögerungsladung  
recovered charge  
V
-
-
12  
22  
-
-
µAs  
µAs  
I
Abschaltenergie pro Puls  
reverse recovery energy  
V
Erec  
-
-
4
9
-
-
mWs  
mWs  
VR = 600V, VGE = -15V, Tvj = 125°C  
2(8)  
DB_BSM100GB120DLC.xls