Et r on Tech
EM658160
4Mx16 DDR SDRAM
Capacitance (VDD = 3.3V, f = 1MHz, Ta = 25 °C)
Symbol
Parameter
Min.
2.5
2.5
4
Max.
5
Unit
pF
CIN
Input Capacitance (except for CK pin)
Input Capacitance (CK pin)
DQ, DQS, DM Capacitance
4
pF
CI/O
6.5
pF
Note: These parameters are periodically sampled and are not 100% tested.
Recommended D.C. Operating Conditions (VDD = 3.3V 0.3, Ta = 0~70 °C)
Max.
- 3.3/3.5/4/5/6/7/8
Parameter
Operation Current
(one bank active)
Symbol
UNIT
tRC = min, tCK = min
Active-precharge
IDD0
250/240/230/220/190/180/160
Operation Current
(one bank active)
Burst = 2, tRC = min, CL = 3
IOUT = 0mA, Active-Read-Precharge
IDD1
IDD2P
IDD2N
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
320/300/260/250/220/210/200
80/80/80/65/65/60/55
Precharge Power-
down Standby Current
CKE ≤ VIL(max), tCK = min,
All banks idle
Idel Standby Current
CKE ≥ VIH(min), CS# ≥ VIH(min),
tCK = min
170/160/150/130/110/100/90
80/80/80/65/65/60/55
Active Power-down
Standby Current
All banks ACT, CKE ≤ VIL(max),
tCK = min
mA
Active Standby
Current
One bank; Active-Precharge,
tRC = tRAS(max), tCK = min
180/170/160/155/145/140/135
330/310/270/250/220/200/180
330/310/270/250/220/200/180
190/180/170/155/145/140/135
Operation Current
(Read)
Burst = 2, CL = 3, tCK = min,
IOUT = 0mA
Operation Current
(Write)
Burst = 2, CL = 3, tCK = min
Auto Refresh Current
tRC(min)
Self Refresh Current
CKE ≤ 0.2v
IDD6
2
Etron Confidential
9
Rev. 1.1
Jan. 2002
ETRON [ ETRON TECHNOLOGY, INC. ]
