Et r on Tech
EM658160
4Mx16 DDR SDRAM
Absolute Maximum Rating
Symbol
Item
Rating
Unit
V
Note
VIN, VOUT
VDD, VDDQ
TOPR
Input, Output Voltage
Power Supply Voltage
Operating Temperature
Storage Temperature
- 0.3~ VDD + 0.3
1
1
1
1
1
1
1
- 0.3~3.6
0~70
- 55~150
260
V
°C
°C
°C
W
TSTG
TSOLDER
PD
Soldering Temperature (10s)
Power Dissipation
1
IOUT
Short Circuit Output Current
50
mA
Recommended D.C. Operating Conditions (Ta = 0 ~ 70 °C)
Parameter
Symbol
Min.
Max.
Unit
Note
Power Supply Voltage
VDD
3.0
3.6
V
V
V
V
V
V
V
Power Supply Voltage (for I/O Buffer)
Input Reference Voltage
Termination Voltage
VDDQ
2.3
2.7
VREF
1.15
1.35
VTT
V
- 0.04
V
+ 0.04
REF
REF
Input High Voltage (DC)
Input Low Voltage (DC)
VIH (DC)
VIL (DC)
VIN (DC)
V
+ 0.18
V
+ 0.3
REF
DDQ
-0.3
V
– 0.18
REF
Input Voltage Level, CLK and CLK#
inputs
-0.3
V
+ 0.3
DDQ
Input Different Voltage, CLK and CLK#
inputs
VID (DC)
-0.36
V
DDQ +
0.6
V
Input leakage current
Output leakage current
Output High Voltage
Output Low Voltage
II
-5
-5
5
5
-
µA
µA
V
IOZ
VOH
VOL
VTT + 0.76
I
= -15.2 mA
= +15.2 mA
OH
VTT – 0.76
V
I
OL
Etron Confidential
8
Rev. 1.1
Jan. 2002
ETRON [ ETRON TECHNOLOGY, INC. ]
