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EM565161BJ-70 参数 Datasheet PDF下载

EM565161BJ-70图片预览
型号: EM565161BJ-70
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16的低功耗SRAM [512K x 16 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 792 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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Et r on Tech  
EM565161  
DC Recommended Operating Conditions (Ta=-40°C to 85°C)  
Symbol  
Parameter  
Power Supply Voltage  
Input High Voltage  
Min  
2.3  
2.2  
Typ  
3.0  
Max  
Unit  
V
3.6  
V
DD  
(1)  
V
V
+ 0.3  
IH  
DD  
(2)  
V
Input Low Voltage  
-0.3  
0.6  
3.6  
IL  
V
Data Retention Supply Voltage  
1.0  
DR  
Note:  
(1) Overshoot : VDD +2.0V in case of pulse width 20ns  
(2) Undershoot : -2.0V in case of pulse width 20ns  
DC Characteristics (Ta = -40°C to 85°C, V  
= 2.3V to 3.6V)  
DD  
Parameter  
Symbol  
Test Conditions  
Min Typ* Max Unit  
Input low current  
I
I
I
I
= 0V to V  
DD  
- 1  
1
0.4  
µA  
V
IL  
IN  
Output low  
voltage  
V
= 2.1 mA  
= -1.0 mA  
OL  
OL  
OH  
Output high  
voltage  
V
DD  
0.15  
V
V
OH  
CE1# = V and  
IL  
Operating current  
Standby current  
I
Cycle time = min  
12  
35  
5
DD1  
CE2 = V and  
IH  
mA  
I
= 0mA  
OUT  
2
I
Cycle time = 1µs  
DD2  
Other Input = V / V  
IH IL  
I
CE1# = V or CE2 = V  
IH  
0.3 mA  
DDS1  
IL  
-55  
-70  
35  
µA  
25  
CE1# = V  
DD  
0.2V or  
I
UB# and LB# = V -0.2V or  
DD  
DDS2  
CE2 = 0.2V  
2
-55E/70E  
14  
80  
Notes:  
* Typical value are measured at Ta = 25°C.  
Capacitance (Ta = 25°C; f = 1 MHz)  
Parameter  
Symbol  
Min  
Max  
8
Unit  
pF  
Test Conditions  
Input capacitance  
Input/Output capacitance  
C
V
= GND  
= GND  
IN  
IN  
IO  
C
10  
pF  
V
IO  
Notes: This parameter is periodically sampled and is not 100% tested.  
Preliminary  
4
Rev 0.9  
Jan 2002