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EM564081BC-85E 参数 Datasheet PDF下载

EM564081BC-85E图片预览
型号: EM564081BC-85E
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8低功耗SRAM [512K x 8 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 291 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM564081  
Write Cycle 3  
(CE2 Controlled)(See Note 4)  
t
WC  
Address  
t
t
t
AS  
WP  
WR  
WE#  
CE1#  
CE2  
t
CW  
t
CW  
t
WHZ  
D
OUT  
t
LZ  
t
t
DS  
DH  
D
(See Note 5)  
VALID DATA IN  
IN  
Note:  
1. WE# remains HIGH for the read cycle.  
2. If CE1# goes LOW (or CE2 goes HIGH) with or after WE# goes LOW, the outputs will remain at high  
impedance.  
3. If CE1# goes HIGH (or CE2 goes LOW) coincident with or before WE# goes HIGH, the outputs will remain  
at high impedance.  
4. If OE# is HIGH during the write cycle, the outputs will remain at high impedance.  
5. Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be  
applied.  
Preliminary  
January 2001  
9
Rev 0.7