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EM564081BC-85E 参数 Datasheet PDF下载

EM564081BC-85E图片预览
型号: EM564081BC-85E
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8低功耗SRAM [512K x 8 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 291 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM564081  
DC Characteristics (Ta = -40 C to 85 C, V  
= 2.3V to 3.6V)  
°
°
DD  
Parameter  
Symbol  
Test Conditions  
Min  
Typ* Max Unit  
Input low current  
I
I
I
I
= 0V to V  
- 1  
-
1
0.4  
-
-
-
-
mA  
V
IL  
IN  
DD  
Output low  
voltage  
V
= 2.1 mA  
= -1.0 mA  
OL  
OL  
OH  
Output high  
voltage  
V
-
DD  
V
V
OH  
0.15  
-
-
-
V
V
V
= 3.6 V  
= 2.7 V  
= 2.3 V  
15  
10  
7
25  
15  
12  
5
DD  
DD  
DD  
CE1# = V and  
IL  
Cycle time  
= min  
I
DD1  
CE2 = V and  
IH  
Operating current  
mA  
I
= 0mA  
OUT  
Other Input = V / V  
IH  
IL  
-
-
-
I
Cycle time = 1ms  
DD2  
I
CE1# = V or CE2 = V  
IH IL  
0.5 mA  
10  
-
DDS1  
V
V
V
V
= 3.6 V  
1
-
-
-
DD  
DD  
DD  
DD  
CE1# = V  
DD  
– 0.2V or  
I
**  
DDS2  
Standby current  
-70/85  
= 2.7 V  
= 2.3 V  
= 3.6 V  
0.8  
0.5  
5
5
3
mA  
CE2 = 0.2V  
(Note)  
-70E/85E  
80  
-
Notes:  
* Typical value are measured at Ta = 25°C.  
** In standby mode with CE1# ³ V  
CE2 ³ VDD - 0.2V or CE2 £ 0.2V.  
- 0.2V, these limits are assured for the condition  
DD  
Capacitance (Ta = 25 C; f = 1 MHz)  
°
Parameter  
Symbol  
Min  
Typ  
Max  
10  
Unit  
pF  
Test Conditions  
Input capacitance  
Output capacitance  
C
V
= GND  
= GND  
-
-
-
-
IN  
IN  
C
10  
pF  
V
OUT  
OUT  
Notes:  
This parameter is periodically sampled and is not 100% tested.  
Preliminary  
January 2001  
4
Rev 0.7