ET4N60
Electrical Characteristics (TC=25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
VGS = 0 V,
ID = 250 uA
ID = 250 uA,
Referenced to
25 °C
BVDSS
Drain-Source Breakdown Voltage
600
-
-
-
-
V
Breakdown Voltage Temperature
coefficient
ΔBVDSS
/
0.6
V/°C
ΔTJ
VDS = 600 V,
VGS = 0 V
-
-
-
-
-
-
-
-
10
100
100
-100
uA
uA
nA
nA
IDSS
Drain-Source Leakage Current
VDS = 480 V,
TC = 125 °C
VGS = 30 V,
VDS = 0 V
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
IGSS
VGS = -30 V,
VDS = 0 V
On Characteristics
VDS = VGS,
ID = 250 uA
VGS = 10 V,
ID = 2.0 A
VGS(th)
Gate Threshold Voltage
2.0
-
-
4.0
2.5
V
Static Drain-Source
On-state Resistance
RDS(ON)
2.0
Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VGS = 0 V,
VDS =25 V,
f = 1 MHz
-
-
545
60
8
710
80
pF
Output Capacitance
Reverse Transfer Capacitance
-
11
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
-
-
-
-
-
-
10
35
30
80
100
90
20
-
VDD = 300 V,
ID = 4.0 A,
ns
RG =25 Ω
Turn-off Delay Time
Fall Time
45
Pulse Width ≤ 300us,
40
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge(Miller Charge)
15
VDS = 480 V,
VGS = 10 V,
ID = 4.0 A
nC
Qgs
Qgd
2.8
6.2
-
-
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Copyright @ Estek Electronics Co., Ltd
Version 0.2 26 Sep 2011
3
ESTEK [ Estek Electronics Co. Ltd ]
