ET4N60
Absolute Maximum Ratings
Symbol
Parameter
Drain to Source Voltage
Value
600
4.0
Units
V
VDSS
Continuous Drain Current(@TC = 25 °C)
Continuous Drain Current(@TC = 100 °C)
Drain Current Pulsed
A
ID
2.5
A
IDM
VGS
16
A
Gate to Source Voltage
+30
240
10
V
EAS
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
mJ
V/ns
EAR
dv/dt
4.5
TO-220
105
33
Total Power Dissipation
TO-220F
PD
W
(@TC = 25 °C)
TO-252
50
TSTG, TJ
Storage Temperature, Junction Temperature
-55~150
°C
Notes:
(1)..
Repeativity rating : pulse width limited by junction temperature
L = 27.5mH, IAS = 4.0 A, VDD = 50 V, RG = 25 Ω , Starting TJ = 25 °C
ISD ≤ 4.0 A, di/dt ≤ 200 A/us, VDD ≤ BVDSS, Starting TJ = 25 °C
(2)..
(3)..
Thermal Characteristics
Value
Min. Typ.
Symbol
Parameter
Units
Max.
1.18
3.79
2.5
-
-
-
-
-
-
-
-
TO-220
TO-220F
TO-252
TO-220
TO-220F
TO-252
Thermal Resistance,
RθJC
Junction-to-Case
°C/W
62.5
62.5
83
Thermal Resistance,
Junction-to-Ambient
RθJA
Source-Drain Diode Characteristics and Maximum Ratings
Symbol
IS
Parameter
Test Conditions
Min. Typ. Max. Units
-
-
-
-
-
Maximum Continuous Source-Drain Diode Forward Current
Maximum Pulsed Source-Drain Diode Forward Current
-
-
4.0
16
1.4
-
A
ISM
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS = 4.0 A, VGS = 0 V
IS = 4.0 A, VGS = 0 V,
dIF/dt = 100 A/us
-
V
300
2.2
ns
uC
Qrr
-
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Version 0.2 26 Sep 2011
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