ESMT
M24L16161ZA
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)Storage
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)Latch-Up
Temperature .................................–65°C to +150°C
Ambient Temperature with
Current....................................................> 200 mA
Power Applied.............................................–55°C to +125°C
Supply Voltage to
Operating Range
Ground Potential..............................–0.3V to VCCMAX + 0.3V
DC Voltage Applied to Outputs
in High Z State[8, 9, 10]......................–0.3V to VCCMAX + 0.3V
DC Input Voltage[8, 9, 10]..................–0.3V to VCCMAX + 0.3V
Output Current into Outputs (LOW).............................20 mA
Ambient
Temperature (TA)
−40°C to +85°C
Range
VCC
Industrial
2.2V to 3.6V
DC Electrical Characteristics (Over the Operating Range) [8, 9, 10]
-70
Parameter
Description
Test Conditions
Unit
Min.
Typ.[4]
Max.
VCC
VOH
Supply Voltage
Output HIGH
Voltage
2.2
3.0
3.6
V
V
IOH = −0.1 mA
VCC = 2.2V to 3.6V
VCC-0.2
Output LOW
Voltage
VOL
IOL = 0.1 mA, VCC = 2.2V to 3.6V
0.2
V
Input HIGH
Voltage
Input LOW Voltage VCC = 2.2V to 3.6V
Input Leakage
GND ≤ VIN < VCC
Current
VIH
VIL
IIX
VCC = 2.2V to 3.6V
0.8* VCC
-0.3
VCC+0.3V
0.2* VCC
+1
V
V
-1
µA
Output Leakage
GND ≤ VOUT ≤ VCC
Current
IOZ
-1
+1
µA
VCC= VCCmax
IOUT = 0mA
CMOS levels
VCC Operating
Supply Current
f = fMAX = 1/tRC
f = 1 MHz
18
3
25
5
ICC
mA
CE > VCC − 0.2V, VIN > VCC − 0.2V, VIN
0.2V, f = fMAX (Address and Data Only), f
<
Automatic CE
Power-Down
Current
ISB1
55
55
70
µA
= 0 ( OE , WE , BHE and BLE ),
—CMOS Inputs
VCC=3.60V, ZZ ≥ VCC – 0.2V
Automatic CE
Power-Down
Current
CE > VCC−0.2V, VIN > VCC − 0.2V or VIN
ISB2
70
10
µA
µA
< 0.2V, f = 0, VCC = VCCMAX
,
ZZ ≥ VCC – 0.2V
—CMOS Inputs
VCC = VCCMAX, ZZ < 0.2V, CE = HIGH or
BHE and BLE = HIGH
Deep Sleep
Current
IZZ
Capacitance[11]
Parameter
Description
Test Conditions
Max.
Unit
pF
TA = 25°C, f = 1 MHz
VCC = VCC(typ)
CIN
Input Capacitance
8
Notes:
8. VIL(MIN) = –0.5V for pulse durations less than 20 ns.
9.VIH(Max) = VCC + 0.5V for pulse durations less than 20 ns.
10.Overshoot and undershoot specifications are characterized and are not 100% tested.
11.Tested initially and after any design or process changes that may affect these parameters..
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.0 7/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
