ESMT
M13S128324A
DC Specifications
Version
Unit
-
Note
-
Parameter
Symbol
Test Condition
-3.6
-4
-5
-6
Operation Current
(One Bank Active)
tRC = tRC (min) tCK = tCK (min)
Active – Precharge
IDD0
235
210
175
145
mA
-
Burst Length = 2 tRC = tRC (min),
CL= 2.5 IOUT = 0mA,
Active-Read- Precharge
Operation Current
(One Bank Active)
IDD1
IDD2P
IDD2N
IDD3P
245
40
220
40
190
40
180
40
mA
mA
mA
mA
-
-
-
-
Precharge Power-down
Standby Current
CKE ≤ VIL(max), tCK = tCK (min),
All banks idle
CKE ≥ VIH(min), CS ≥
VIH(min), tCK = tCK (min)
Idle Standby Current
135
60
120
55
115
50
95
Active Power-down Standby
Current
All banks ACT, CKE ≤ VIL(max),
tCK = tCK (min)
45
One bank; Active-Precharge, tRC
Active Standby Current
IDD3N = tRAS(max),
tCK = tCK (min)
150
130
120
110
mA
-
Burst Length = 2, CL= 2.5 , tCK
CK (min), IOUT = 0Ma
=
=
Operation Current (Read)
Operation Current (Write)
IDD4R
IDD4W
440
470
400
430
350
380
300
330
mA
mA
-
-
t
Burst Length = 2, CL= 2.5 , tCK
CK (min)
t
Auto Refresh Current
Self Refresh Current
IDD5
IDD6
320
3
290
3
270
3
250
3
mA
mA
-
tRC ≥ tRFC(min)
CKE ≤ 0.2V
1
Note 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Symbol
Min
Max
-
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
VIH(AC)
VIL(AC)
VID(AC)
VREF + 0.35
V
V
V
-
-
-
VREF - 0.35
VDDQ+0.6
0.7
1
Input Different Voltage, CLK and CLK inputs
VIX(AC)
0.5*VDDQ-0.2 0.5*VDDQ+0.2
V
2
Input Crossing Point Voltage, CLK and CLK inputs
Note1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of
the same.
Input / Output Capacitance
(VDD = 2.375V~2.75V, VDDQ =2.375V~2.75V, TA = 25°C , f = 1MHz)
(VDD = 2.5V~2.7V, VDDQ =2.5V~2.7V, TA = 25°C , f = 1MHz (for speed -3.6))
(VDD = 2.6V~2.8V, VDDQ =2.6V~2.8V, TA = 25°C , f = 1MHz [only for speed -4(CL3)])
Parameter
Symbol
CIN1
Min
1
Max
4
Unit
pF
Input capacitance(A0~A11, BA0~BA1, CKE, CS , RAS , CAS , WE )
CIN2
1
5
pF
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
COUT
CIN3
1
1
6.5
6.5
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision : 1.8 6/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
