ESMT
M12S16161A
DQ0 ~ 15
VDD/VSS
Data Input / Output
Power Supply/Ground
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved
noise immunity.
VDDQ/VSSQ Data Output Power/Ground
No Connection/
N.C/RFU
This pin is recommended to be left No Connection on the device.
Reserved for Future Use
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Storage temperature
Symbol
VIN,VOUT
VDD,VDDQ
TSTG
Value
-1.0 ~ 3.6
-1.0 ~ 3.6
-55 ~ + 150
0.7
Unit
V
V
°C
Power dissipation
PD
W
Short circuit current
IOS
50
MA
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
°C
Recommended operating conditions (Voltage referenced to VSS = 0V, TA=0 to 70
)
Parameter
Supply voltage
Symbol
VDD,VDDQ
VIH
Min
2.375
0.8xVDDQ
-0.3
Typ
Max
2.625
VDDQ+0.3
0.3
Unit
V
Note
2.5
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
-
0
-
V
1
VIL
V
2
VOH
VDDQ -0.2
-
-
V
IOH = -0.1mA
VOL
-
0.2
V
IOL = -0.1mA
IIL
-10
-
10
uA
uA
3
4
IOL
-10
-
10
Note : 1.VIH (max) = 3.0V AC for pulse width ≤ 3ns acceptable.
2.VIL (min) = -1.0V AC for pulse width ≤ 3ns acceptable.
3.Any input 0V ≤ VIN ≤ VDDQ+ 0.3V, all other pins are not under test = 0V.
4.Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
°C
CAPACITANCE (VDD = 2.5V, TA = 25 , f = 1MHz)
Pin
Symbol
Min
Max
Unit
CLOCK
RAS , CAS , WE , CS , CKE, LDQM,
UDQM
CCLK
2.5
4.0
pF
CIN
2.5
5.0
pF
ADDRESS
CADD
COUT
2.5
4.0
5.0
6.5
pF
pF
DQ0 ~DQ15
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.2 3/28
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
