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M12L32321A-6BG 参数 Datasheet PDF下载

M12L32321A-6BG图片预览
型号: M12L32321A-6BG
PDF下载: 下载PDF文件 查看货源
内容描述: 512K X 32位X 2Banks同步DRAM [512K x 32Bit x 2Banks Synchronous DRAM]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 28 页 / 649 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L32321A  
MODE REGISTER FIELD TABLE TO PROGRAM MODES  
Register Programmed with MRS  
Address  
Function  
BA  
A11~A10/AP  
RFU  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
BT  
A2  
A1  
A0  
RFU  
W.B.L  
TM  
CAS Latency  
Burst Length  
Test Mode  
CAS Latency  
Burst Type  
Burst Length  
A8  
0
A7  
Type  
A6  
A5  
0
A4  
0
Latency  
Reserved  
Reserved  
2
A3  
Type  
A2  
0
A1  
0
A0  
0
BT = 0  
BT = 1  
0
1
0
1
Mode Register Set  
Reserved  
0
0
0
0
1
1
1
1
0
1
Sequential  
Interleave  
1
2
4
8
1
2
4
8
0
0
1
0
0
1
1
Reserved  
1
0
0
1
0
1
Reserved  
1
1
3
0
1
1
Write Burst Length  
Length  
0
0
Reserved  
Reserved  
Reserved  
Reserved  
1
0
0
Reserved Reserved  
Reserved Reserved  
Reserved Reserved  
Full Page Reserved  
A9  
0
0
1
1
0
1
Burst  
1
0
1
1
0
1
Single Bit  
1
1
1
1
1
Full Page Length : 256  
Note : 1. RFU(Reserved for future use) should stay “0” during MRS cycle.  
2. If A9 is high during MRS cycle, “Burst Read Single Bit Write” function will be enabled.  
3. The full column burst (256 bit) is available only at sequential mode of burst type.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Oct. 2008  
Revision : 1.1 7/28