ESMT
M12L128324A
Operation temperature condition -40°C~85°C
CAPACITANCE (VDD = 3.3V, TA = 25°C, f = 1MHZ)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A10, BA0 ~ BA1)
CIN1
2
4
pF
Input capacitance
CIN2
2
2
4
5
pF
pF
(CLK, CKE, CS , RAS , CAS , WE & DQM)
Data input/output capacitance (DQ0 ~ DQ31)
COUT
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，TA = -40 to 85°C
CAS
Latency
Version
Parameter
Symbol
Test Condition
Burst Length = 1
Unit Note
-6
-7
Operating Current
(One Bank Active)
ICC1
160
140
mA
mA
1,2
tRC ≥ tRC(min)
IOL = 0 mA
ICC2P
3
1
CKE ≤ VIL(max), tcc = 10ns
CKE & CLK ≤ VIL(max), tcc = ∞
Precharge Standby Current
in power-down mode
ICC2PS
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
ICC2N
30
9
Input signals are changed one time during 20ns
Precharge Standby Current
in non power-down mode
mA
mA
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
input signals are stable
ICC2NS
ICC3P
7
6
CKE ≤ VIL(max), tcc = 10ns
Active Standby Current
in power-down mode
ICC3PS
CKE & CLK ≤ VIL(max), tcc = ∞
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 15ns
Active Standby Current
in non power-down mode
(One Bank Active)
40
15
mA
mA
Input signals are changed one time during 30ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
input signals are stable
ICC3NS
IOL = 0 mA
Page Burst
2 Banks activated
tCK = tCK(min)
Operating Current
(Burst Mode)
ICC4
270
270
240
240
mA
1,2
Refresh Current
ICC5
ICC6
mA
mA
tRC ≥ tRC(min)
Self Refresh Current
2
CKE ≤ 0.2V
Note : 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
Elite Semiconductor Memory Technology Inc.
Publication Date: Feb. 2006
Revision: 1.1 6/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
