ESMT
M12L128168A
Operation temperature condition -40°C ~85°C
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，TA = -40 to 85 °C
Version
-6
CAS
Latency
Parameter
Symbol
Test Condition
Unit Note
-5
-7
Operating Current
(One Bank Active)
ICC1
Burst Length = 1, tRC ≥ tRC(min), IOL = 0 mA
CKE ≤ VIL(max), tcc = tCK(MIN)
170 160 140
2
mA
mA
1,2
ICC2P
Precharge Standby Current
in power-down mode
ICC2PS
ICC2N
2
CKE & CLK ≤ VIL (max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = tCK(MIN)
Input signals are changed one time during 2tck
45
Precharge Standby Current
in non power-down mode
mA
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
input signals are stable
ICC2NS
25
ICC3P
6
6
CKE ≤ VIL(max), tCC = tCK(MIN)
Active Standby Current
in power-down mode
mA
mA
ICC3PS
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns
Input signals are changed one time during 2clks
All other pins ≥ VDD-0.2V or ≤ 0.2V
55
ICC3N
Active Standby Current
in non power-down mode
(One Bank Active)
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
input signals are stable
ICC3NS
ICC4
35
mA
mA
Operating Current
(Burst Mode)
IOL = 0 mA, Page Burst, 2 Banks activated
1,2
280 210 180
Refresh Current
ICC5
ICC6
280 210 180
2
mA
mA
tRC ≥ tRC(min)
CKE ≤ 0.2V
Self Refresh Current
Note : 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
Elite Semiconductor Memory Technology Inc.
Publication Date: Oct. 2007
Revision: 1.2 4/43
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
