ESMT
M12L128168A (2N)
Automotive Grade
AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V)
Parameter
Input levels (Vih/Vil)
Value
Unit
V
2.4/0.4
1.4
Input timing measurement reference level
Input rise and fall-time
V
tr/tf = 1/1
1.4
ns
V
Output timing measurement reference level
Output load condition
See Fig. 2
Vtt = 1.4V
3.3V
50 Ω
1200
Ω
VOH (DC) =2.4V , IOH = -2 mA
VOL (DC) =0.4V , IOL = 2 mA
Output
Output
Z0 =50 Ω
50pF
50pF
870 Ω
(Fig. 1) DC Output Load Circuit
(Fig. 2) AC Output Load Circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Version
Parameter
Symbol
Unit
Note
-5
10
15
-6
12
18
-7
14
21
Row active to row active delay
tRRD(min)
ns
ns
1
1
t
RCD(min)
RAS to CAS delay
Row precharge time
tRP(min)
15
40
18
42
21
42
ns
ns
1
1
tRAS(min)
Row active time
t
RAS(max)
tRC(min)
RFC(min)
100
60
us
ns
@ Operating
Row cycle time
55
55
63
63
1
@ Auto refresh
t
60
ns
1,5
Last data in to col. address delay
tCDL(min)
tRDL(min)
tBDL(min)
1
2
CLK
CLK
CLK
ms
2
2
2
6
6
3
Last data in to row precharge
Last data in to burst stop
1
t
REF(max)
Refresh period (4,096 rows) for TA ≤ 85℃
Refresh period (4,096 rows) for TA＞85℃ (VA grade only)
Col. address to col. address delay
64
16
1
tREF(max)
tCCD(min)
ms
CLK
CAS latency = 3
CAS latency = 2
2
1
Number of valid Output data
ea
4
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then
rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. A new command may be given tRFC after self refresh exit.
6. A maximum of eight consecutive AUTO REFRESH commands (with tRFC(min)) can be posted to any given SDRAM, and
the maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH command is
8x15.6μ s (8 x 3.9μs for VA grade with TA＞85℃).
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2012
Revision: 1.1 6/46
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
