M11B1644A / M11B1644SA
M11L1644A / M11L1644SA
READ WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
tR W C
tR A S
tR P
VI H
VI L
RA S
tC S H
t
R S H
tC R P
tC A S
tR C D
VI H
VI L
CA S
tA R
tR A L
tC A H
tR A D
tR A H
tA S C
tA S R
tA C H
VI H
VI L
AD D R
RO W
C O LU M N
R OW
tC W L
tR W L
t W P
t
R W D
tC W D
tA W D
tR C S
VI H
VI L
WE
t A A
tR A C
t
C A C
tD H
tD S
tC L Z
V I / O
V I / O
H
I/O
VAL ID D O U T
VA LI D DI N
OPEN
L
tO
A C
tO E H
tO
F F 2
V I H
V I L
OE
EDO-PAGE-MODE READ CYCLE
tR A S C
tR P
VI H
VI L
RAS
CAS
tP C
( N OT E2)
tC S H
tR C D
tR S H
tC A S
t
C R P
tC A S
tC A S
tC P
tC P
t
C P
VI H
VI L
tA R
tA S C
tA C H
tR A L
t
C A H
tA C H
tC A H
tR A D
tA C H
C A H
tA S C
tA S R
t
R A H
tA S C
t
V I H
V I L
AD DR
C O LU M N
CO L UM N
R OW
R O W
C O LU M N
tR R H
tR C H
t
R C S
VI H
VI L
W E
tA A
tA C P
tC A C
t A A
tA C P
tC A C
tA A
tR A C
tC A C
NO TE 1
tC L Z
t
C L Z
tC O H
tO
F F 1
VO H
VO L
V A L I D
I/O
VALID DATA
tO F
OPEN
VAL ID D AT A
OPEN
D A T A
t
O E H C
tO
A C
tO
A C
F 2
tO E S
tO
F F 2
tO
E S
VI H
VI L
OE
tO E P
DON'T CARE
UNDEFINED
OFF1
PC
*NOTE : 1. t
is referenced from the rising edge of RAS or CAS , whichever occurs last.
2. t can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of CAS to rising edge of
PC
CAS . Both measurements must meet the t specification.
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2001
Revision : 1.1 9/16
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
