M11B16161A / M11B16161SA
M11L16161A / M11L16161SA
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
5V Product
3.3V Product
… ……-1V to +7V
… ……-0.5V to +4.6V
A
° to +70°
C C
Operating Temperature, T (ambient) ….0
Storage Temperature (plastic) ……….-55 ° to +150°
C
C
Power Dissipation …………………………………1.0W
Short Circuit Output Current ……………………50mA
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS (0 °C ≤ T
A ≤ 70 °C )
3.3V
5V
PARAMETER
CONDITIONS
SYMBOL
UNITS NOTES
MIN
3.0
0
MAX
3.6
0
MIN
4.5
0
MAX
5.5
0
CC
Supply Voltage
V
V
V
1
SS
V
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
IH
CC
CC
V
2.0
-1.0
-10
V
+0.3
2.4
-1.0
-10
V
+0.3
V
1
1
IL
V
0.8
0.8
V
µ A
IN
IH(max)
LI
0V ≤ V ≤ V
I
10
10
10
10
0V ≤ VOUT ≤ VCC
Output Leakage Current
Output High Voltage
µ A
LO
I
-10
2.4
-
-10
2.4
-
Output(s) disable
OH
5V
3.3V
5V
I
I
I
I
= -5 mA
= -2 mA
= 4.2 mA
= 2 mA
OH
V
-
-
V
V
OH
OL
OL
Output Low Voltage
OL
V
0.4
0.4
3.3V
SS
Note : 1.All Voltages referenced to V
MAX
-50
PARAMETER
CONDITIONS
SYMBOL
UNITS NOTES
-45
-60
CC1
Operating Current
I
150 140 130
mA
mA
1,2
RC
RAS , CAS cycling , t =min
IH
TTL interface ,RAS , CAS = V
,
4
4
4
OUT
D
=High-Z
CC2
Standby Current
I
mA
mA
mA
CC
CMOS interface, RAS , CAS ≥ V -0.2V
2
2
2
RC
t
= min
= min
150 140 130
150 140 130
2
CC3
RAS only refresh Current
EDO Page Mode Current
I
PC
RC
CC4
t
I
1,3
CAS BeforeRAS Refresh
Current
t
= min
150 140 130
500 500 500
500 500 500
mA
µ A
µ A
CC6
I
RC
Standby with CBR refresh, t = 62.4us
Battery Backup Current
(S-ver. Only)
CC7
I
RAS
≤ 300ns, D
OUT
t
=Hi-Z, CMOS interface
Self Refresh Current
(S-ver. Only)
OUT
RAS , CAS ≤ 0.2V, D
=Hi-Z, CMOS
CC8
I
interface
CC
Note : 1.I max is specified at the output open condition.
IL .
2. Address can be changed twice or less while RAS =V
IH
3. Address can be changed once or less while CAS =V
.
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2001
Revision : 1.3 3/16
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
