M11B16161A / M11B16161SA
M11L16161A / M11L16161SA
READ WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
tR W C
tR AS
tR P
V IH
V IL
RA S
C ASL ,C ASH
AD D R
tC S H
tR S H
tC R P
tC AS , tC L C H
tR C D
V IH
V IL
tA R
tR AL
tC AH
tR A D
tR A H
tAS C
tAS R
t AC H
VI H
VI L
R O W
C O L U M N
R O W
tC W L
tR W L
tW P
tR W D
tC W D
tA W D
tR C S
VI H
VI L
W E
t A A
tR AC
tC A C
tD H
tD S
tC L Z
I / O H
V
I/O
VA L ID D O U T
I N
VA LID D
OPE N
V I / O L
tO AC
tO E H
tO F F 2
V I H
V I L
OE
EDO-PAGE-MODE READ CYCLE
t R AS C
tR P
V I H
V I L
RA S
tP C
tC S H
tRC D
( N O TE 2)
tR S H
tC AS , tC L C H
tC A S , tC L C H
tC R P
tC A S , tC L C H
tC P
tC P
tC P
VI H
VI L
CA SL,C AS H
tA R
tAS C
tAC H
tR AL
tC A H
tAC H
tC A H
tR A D
tR AH
tA C H
tC A H
tAS C
tA S R
t AS C
I H
V
A D D R
C O L U M N
C O L U M N
R O W
I L
R O W
C O L U M N
V
tR R H
tRC H
tR C S
V IH
V IL
W E
tA A
t A A
t A A
tR AC
tA C P
tC A C
tA C P
tC A C
t C AC
N O TE 1
t O F F 1
tC L Z
tO E H C
tC O H
tC L Z
VO H
VO L
V A L I D
D A T A
I/O
VAL ID D ATA
OPE N
VAL ID D ATA
O PEN
tO AC
tO E S
tO A C
tO E S
tO F F 2
tO F F 2
IH
V
V IL
OE
tO E P
DON'T CARE
UNDEFINED
OFF1
*NOTE : 1. t
is referenced from the rising edge of RAS or CAS , whichever occurs last.
PC
2. t can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of CAS to rising edge of
PC
CAS . Both measurements must meet the t specification.
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2001
Revision : 1.3 9/16