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F49L400UA-70T 参数 Datasheet PDF下载

F49L400UA-70T图片预览
型号: F49L400UA-70T
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8 / 256K ×16 ) 3V只有CMOS闪存 [4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 47 页 / 388 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EFST  
F49L400UA/F49L400BA  
7. FUNCTIONAL DESCRIPTION  
7.1 Device operation  
This section describes the requirements and use  
of the device bus operations, which are initiated  
through the internal command register. The  
register is composed of latches that store the  
command, address and data information needed  
to execute the command. The contents of the  
register serve as inputs to the internal state  
machine. The state machine outputs dictate the  
function  
of  
the  
device.  
The  
F49L400UA/F49L400BA features various bus  
operations as Table 3.  
Table 3. F49L400UA/F49L400BA Operation Modes Selection  
ADDRESS  
A8  
A17 A11  
A5  
|
DESCRIPTION  
DQ0~DQ7  
OE  
RESET  
CE  
WE  
|
|
|
A9  
A6  
A1 A0  
A12 A10  
A7  
A2  
L, Vss±  
0.3V(3)  
Reset(3)  
X
X
X
X
High Z  
Read  
L
L
L
L
H
H
H
L
H
H
H
AIN  
AIN  
X
Dout  
DIN  
Write  
Output Disable  
H
High Z  
V
0.3V  
CC±±  
VCC±±  
0.3V  
Standby  
X
X
X
High Z  
Sector Protect(2)  
L
L
H
H
X
L
L
X
VID  
SA  
SA  
X
X
X
X
X
L
X
X
H
H
L
L
DIN  
DIN  
DIN  
Sector Unprotect(2)  
Temporary sector unprotect  
Auto-select  
VID  
X
H
X
VID  
AIN  
See Table 4  
Notes:  
1. L= Logic Low = VIL, H= Logic High = VIH, X= Don't Care, SA= Sector Address, VID=11.5V to 12.5V.  
AIN= Address In, DIN = Data In, Dout = Data Out.  
2. The sector protect and unprotect functions may also be implemented via programming equipment.  
3. See “Reset Mode” section.  
Elite Flash Storage Technology Inc.  
Publication Date : Sep. 2006  
Revision: 1.1 5/47