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F49L040A 参数 Datasheet PDF下载

F49L040A图片预览
型号: F49L040A
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8 )只有3V CMOS闪存 [4 Mbit (512K x 8) 3V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 41 页 / 391 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EFST  
F49L040A  
Figure 16 shows the algorithms and Figure 15 shows  
the timing diagram. This method uses standard  
microprocessor bus cycle timing. For sector unprotect,  
all unprotected sectors must first be protected prior to  
the first sector unprotect write cycle.  
When using programming equipment, this mode  
requires V (11.5 V to 12.5 V) on address pin A9.  
ID  
While address pins A3, A2, A1, and A0 must be as  
shown in Table 3.  
To verify sector protection, all necessary pins have to  
be set as required in Table 3, the programming  
equipment may then read the corresponding identifier  
code on DQ7-DQ0.  
Auto-select Mode  
The auto-select mode provides manufacturer and  
device identification and sector protection verification,  
through outputs on DQ7–DQ0. This mode is primarily  
intended for programming equipment to automatically  
To access the auto-select codes in-system, the host  
system can issue the auto-select command via the  
command register, as shown in Table 4. This method  
match  
a
device to be programmed with its  
corresponding programming algorithm. However, the  
auto-select codes can also be accessed in-system  
through the command register.  
does not require V . See “ Software Command  
ID  
Definitions” for details on using the auto-select mode.  
7.2 Software Command Definitions  
Writing specific address and data commands or  
sequences into the command register initiates the  
device operations. Table 4 defines the valid register  
command sequences. Writing incorrect address and  
data values or writing them in the improper sequence  
resets the device to reading array data.  
All addresses are latched on the falling edge of  
WE  
or  
, whichever happens later. All data is latched on  
CE  
the rising edge of  
or  
, whichever happens  
WE  
CE  
first. Refer to the corresponding timing diagrams in  
the AC Characteristics section.  
Table 4. F49L040A Software Command Definitions  
1st Bus 2nd Bus 3rd Bus 4th Bus  
5th Bus  
Cycle  
6th Bus  
Cycle  
Bus  
Cycle Cycle Cycle Cycle  
Command  
Cycles  
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data  
Reset (5)  
Read (4)  
1
1
4
6
6
XXXH F0H  
RA RD  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Program  
555H AAH 2AAH 55H 555H A0H  
PA  
PD  
Chip Erase  
Sector Erase  
555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H  
555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H  
SA  
30H  
Sector Erase  
Suspend (6)  
1
1
XXXH B0H  
XXXH 30H  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Sector Erase Resume  
(7)  
-
-
-
Auto-select  
See Table 5.  
Notes:  
1. X = don’t care  
RA = Address of memory location to be read.  
RD = Data to be read at location RA.  
PA = Address of memory location to be programmed.  
PD = Data to be programmed at location PA.  
SA = Address of the sector.  
2. Except Read command and Auto-select command, all command bus cycles are write operations.  
3. Address bits A18–A16 are don’t cares.  
4. No command cycles required when reading array data.  
5. The system may read and program in non-erasing sectors, or enter the auto-select mode, when in the Erase  
Suspend mode. The Erase Suspend command is valid only during a sector erase operation.  
6. The Erase Resume command is valid only during the Erase Suspend mode.  
Elite Flash Storage Technology Inc.  
Publication Date : Apr. 2005  
Revision: 1.0 7/41