ESMT
(Preliminary)
F25S04PA
GENERAL DESCRIPTION
The F25S04PA is a 4Megabit, 2.5V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory
devices reliably store memory data even after 100,000
programming and erase cycles.
is divided into 128 uniform sectors with 4K byte each; 8 uniform
blocks with 64K byte each. Sectors can be erased individually
without affecting the data in other sectors. Blocks can be erased
individually without affecting the data in other blocks. Whole chip
erase capabilities provide the flexibility to revise the data in the
device. The device has Sector, Block or Chip Erase but no page
erase.
The memory array can be organized into 2,048 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
The device features sector erase architecture. The memory array
PIN CONFIGURATIONS
8- LEAD SOIC
1
8
VDD
CE
HOLD
SCK
SO
2
3
7
6
WP
SI
VSS
4
5
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2
2/34
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
