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F25L04UA-75PG 参数 Datasheet PDF下载

F25L04UA-75PG图片预览
型号: F25L04UA-75PG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有4兆位串行闪存 [3V Only 4 Mbit Serial Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 25 页 / 271 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L04UA  
SECTOR STRUCTURE  
Table1 : F25L04UA Sector Address Table  
Sector Address  
A18 A17 A16 A15 A14 A13 A12  
Sector Size  
Symbol  
Address range  
(Kbytes)  
11  
10  
9
8KB  
4KB  
7E000H – 7FFFFH  
7D000H – 7DFFFH  
7C000H – 7CFFFH  
78000H – 7BFFFH  
70000H – 77FFFH  
60000H – 6FFFFH  
50000H – 5FFFFH  
40000H – 4FFFFH  
30000H – 3FFFFH  
20000H – 2FFFFH  
10000H – 1FFFFH  
00000H – 0FFFFH  
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
1
1
0
0
1
1
0
0
1
1
1
1
1
0
1
0
1
0
1
0
1
1
1
1
1
0
X
1
4KB  
1
1
0
0
8
16KB  
32KB  
64KB  
64KB  
64KB  
64KB  
64KB  
64KB  
64KB  
1
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
7
0
X
X
X
X
X
X
X
X
6
X
X
X
X
X
X
X
5
4
3
2
1
0
Table2 : F25L04UA Block Protection Table  
Protection Level  
BP1  
BP0  
Protected Memory Area  
None  
0
0
0
1
1
0
1
0
1
1(1/8 memory array)  
2(1/4 memory array)  
3(all memory array)  
70000H –7FFFFH  
60000H –7FFFFH  
00000H –7FFFFH  
Block Protection (BP1, BP0)  
Block Protection Lock-Down (BPL)  
The Block-Protection (BP1, BP0) bits define the size of the  
memory area, as defined in Table2 to be software protected  
against any memory Write (Program or Erase) operations. The  
Write-Status-Register (WRSR) instruction is used to program the  
WP pin driven low (VIL), enables the Block-Protection  
-Lock-Down (BPL) bit. When BPL is set to 1, it prevents any  
further alteration of the BPL, BP1, and BP0 bits. When the WP  
pin is driven high (VIH), the BPL bit has no effect and its value is  
“Don’t Care”. After power-up, the BPL bit is reset to 0.  
BP1 and BP0 bits as long as WP is high or the  
Block-Protection-Look (BPL) bit is 0. Chip-Erase can only be  
executed if Block-Protection bits are both 0. After power-up, BP1  
and BP0 are set to1.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 1.2  
3/25