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PTF10100 参数 Datasheet PDF下载

PTF10100图片预览
型号: PTF10100
PDF下载: 下载PDF文件 查看货源
内容描述: 165瓦, 860-900 MHz的LDMOS场效应晶体管 [165 Watts, 860-900 MHz LDMOS Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 6 页 / 167 K
品牌: ERICSSON [ ERICSSON ]
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PTF 10100  
e
Electrical Characteristics (per side) (100% Tested)  
Characteristic  
Conditions  
Symbol Min  
Typ  
Max  
Units  
Volts  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate Threshold Voltage  
V
GS  
V
DS  
V
DS  
V
DS  
= 0 V, I = 5 mA  
V
(BR)DSS  
65  
D
= 28 V, V = 0 V  
I
1.0  
mA  
GS  
DSS  
= 10 V, I = 75 mA  
V
GS(th)  
4.3  
2.5  
Volts  
D
Forward Transconductance  
= 10 V, I = 3 A  
g
Siemens  
D
fs  
RF Specifications (100% Tested)  
Characteristic  
Symbol Min  
Typ  
Max  
Units  
Gain  
(V = 28 V, P  
= 165 W, I  
= 1.8 A Total, f = 894 MHz)  
G
ps  
12.0  
165  
45  
13.0  
180  
50  
dB  
Watts  
%
DD  
OUT  
DQ  
Power Output at 1 dB Compression  
(V = 28 V, I = 1.8 A Total, f = 880 MHz)  
P-1dB  
DD  
CQ  
Drain Efficiency  
(V = 28 V, P  
= 165 W, I = 1.8 A Total, f = 894 MHz)  
DQ  
h
DD  
OUT  
Load Mismatch Tolerance  
(V = 28 V, P = 165 W(PEP), I = 1.8 A Total,  
DQ  
Y
10:1  
DD  
OUT  
f = 893.9, 894 MHz—all phase angles at frequency of test)  
Typical Performance  
Broadband Test Fixture Performance  
Typical POUT (at P-1dB), Gain vs. Frequency  
16  
14  
12  
10  
8
60  
50  
40  
30  
18  
16  
14  
12  
10  
225  
175  
125  
75  
Efficiency (%)  
Output Power (W)  
Gain  
VDD = 28 V  
VDD = 28 V  
IDQ = 1.8 A Total  
IDQ = 1.8 A Total  
Return  
Gain (dB)  
-5  
-10  
-15  
-20  
-25  
Loss (dB)  
POUT = 165 W  
Efficiency (%)  
885 890 895  
25  
865  
870  
875  
880  
865  
870  
875  
880  
885  
890  
895  
Frequency (MHz)  
Frequency (MHz)  
2