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PTF 10100
165 Watts, 860–900 MHz
LDMOS Field Effect Transistor
Description
The 10100 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for large signal amplifier
applications from 860 to 900 MHz. It is rated at 165 watts power output.
Nitride surface passivation and gold metallization ensure excellent
device lifetime and reliability.
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INTERNALLY MATCHED
Performance at 894 MHz, 28 Volts
- Output Power = 165 Watts
- Power Gain = 13.0 dB Typ
- Drain Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% lot traceability
Typical Output Power & Efficiency vs. Input Power
180
60
Efficiency
Output Power (Watts)
Efficiency (%)
140
45
100
30
A-12
3456
9917
1010
0
V
DD
= 28.0 V
60
Output Power
20
0
1
2
3
4
5
6
7
8
0
I
DQ
= 1.8 A Total
f = 880 MHz
15
Input Power (Watts)
Package 20250
Maximum Ratings
Parameter
Drain-Source Voltage
(1)
Gate-Source Voltage
(1)
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
(1)
per side
Symbol
V
DSS
V
GS
T
J
P
D
T
STG
R
qJC
Value
65
±20
200
500
2.85
–40 to +150
0.35
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
1
ERICSSON [ ERICSSON ]
